Effect of sulfur substitution on the thermoelectric properties of (SnSe)_1.16NbSe₂: charge transfer in a misfit layered structure

Abstract

First time investigation of the thermoelectric properties of misfit layered (SnSe)1.16NbSe2 and new insights into the charge transfer tuning in misfit systems.

Strong Anisotropic Thermal Conductivity in Polycrystalline Layers of (AgxSn1‐xS)1.2(TiS2)2 with Prospects Toward Improved Thermoelectric Performance

“…Particularly, the out‐of‐plane zT of the Ag‐4% sample is even superior to other misfit‐layered chalcogenides in‐plane values such as (LaS) 1.14 NbS 2 (0.15 at 950 K) [ 37 ] and (SnSe) 1.16 NbSe 2 (0.03 at 760 K). [ 28 ] On the other hand, the zT of Ag‐substituted misfit‐layered (Ag x Sn 1‐ x S) 1.2 (TiS 2 ) 2 is also comparable to the zT of Ag‐doped layered SnS materials, such as SnS 0.995 Ag 0.005 S of 0.6 at 873 K. [ 38 ] Therefore, it is prospective for the Ag‐substituted (SnS) 1.2 (TiS 2 ) 2 to be regarded as potential candidates of thermoelectric materials.…”

“…Recently, effective strategies such as carrier concentration optimization, [22] density-of-state resonance, [23] promotion of carrier mobility, [24] all-scale hierarchical architectures, [25] low phonon velocity, [26] and low specific heat, [27] are widely used to improve the zT values, which are also applicable to the misfit-layered sulfides. For instance, improving carrier mobility, [28,29] optimizing carrier concentration, [30,31] and enhancing density-of-state distortion [32,33] are utilized to promote the electrical transport properties of (MS) 1+m (TiS 2 ) 2 . Alternatively, softening lattice [29,34] or introducing planar defects of translational displacement and stacking faults [35][36][37] are also adopted to minimize thermal conductivity.…”

Recent Progress of Two-Dimensional Transition Metal Dichalcogenides for Thermoelectric Applications

“…To improve the TE performance in (MX) 1+x (TX 2 ) m materials, various strategies have been proposed to promote their electrical transport properties [114,[119][120][121], including improving carrier mobility, optimizing carrier concentration, and enhancing DOS distortion. Alternatively, thermal conductivity could be minimized by softening lattice or introducing planar defects (such as translational displacement and stacking faults) [110,115,122].…”

An Integrated Approach to Thermoelectrics: Combining Phonon Dynamics, Nanoengineering, Novel Materials Development, Module Fabrication, and Metrology

“…PGEC is a well‐known strategy for developing high‐ ZT thermoelectric materials; the phonon glass region provides the disorder required for phonon scattering (i.e., low κ lat ) while maintaining the µ in the electron crystal region (i.e., high S 2 /ρ). Layered systems such as superlattice thin films, layered bulk oxides (e.g., Na x CoO 2 and Ca‒Co‒O), and layered chalcogenides (e.g., SnSe) are good examples of PGEC behavior, with one layer acting as phonon glass and the other as electron crystal. At AIST, we have explored the potential of the layered sulfides TiS 2 , (LaS) 1.20 CrS 2 , and (LaS) 1.14 NbS 2 , which are members of a large family of misfit layered chalcogenides (MX) 1+ m (TX 2 ) n (M = Pb, Bi, Sn, Sb, and rare‐earth elements; T = Ti, V, Cr, Nb, and Ta; X = S, Se; n = 1, 2, and 3; and 0.08 < m < 0.30) .…”