Effect of sulfur treatment on HfO&lt;sub&gt;2&lt;/sub&gt;/InGaAs MOS interfaces properties

Suzuki, Ryoichi; Lee, S.; Kim, S. H.; Hoshii, Takuya; Yokoyama, Masaya; Taoka, Naoto; Yasuda, Tetsuji; Jevasuwan, Wipakorn; Maeda, Tatsuro; Ichikawa, Osamu; Fukuhara, Nobuhiko; Hata, Miasaki; Takenaka, Mikihito; Takagi, Shigetaka

doi:10.7567/ssdm.2011.e-8-3

Cited by 6 publications

(5 citation statements)

References 1 publication

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“…On the other hand, the recent reports have revealed that the surface roughness plays an important role in the electrical properties of InGaAs-OI MOSFETs 8) and that post deposition annealing after dielectric deposition and PMA also affect the InGaAs MOS interface properties. 15) Therefore, further improvements can be still expected through the InGaAs surface roughness reduction and the process optimization.…”

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confidence: 99%

High Performance Extremely Thin Body InGaAs-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates with Ni–InGaAs Metal Source/Drain

Kim

Yokoyama

Taoka

et al. 2011

Appl. Phys. Express

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The extremely thin body (ETB) InGaAs-on-insulator (-OI) metal–oxide–semiconductor field-effect transistors (MOSFETs) on Si substrates were demonstrated by using Ni–InGaAs alloy metal source/drain (S/D). It has been found that a light doping concentration of ∼1016 cm-3 and indium-rich InGaAs channels (In0.7Ga0.3As) provide a high mobility of 1700 cm2 V-1 s-1 even in the channel thickness of 10 nm. This is the first demonstration of ETB III–V-OI MOSFETs combined with the metal S/D technology. We have also achieved excellent ID–VG characteristics with an Ion/Ioff ratio of over 105 and low SS of 120 mV/dec in 5-nm-thick In0.7Ga0.3As-OI MOSFETs.

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confidence: 99%

High Performance Extremely Thin Body InGaAs-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates with Ni–InGaAs Metal Source/Drain

Kim

Yokoyama

Taoka

et al. 2011

Appl. Phys. Express

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“…Also, these defects might be formed in the initial ALD steps through the oxidant exposure. Also, in Figure 9, we have benchmarked our results, comparing them to the best results ever reported in the field of III-V MOS device studies [56][57][58][59][60][61]. Extraordinary mid-gap D it values are achieved with low CET values with the proposed technology.…”

Section: Characterization Of Ipa-based Ald Hfo 2 On N-and P-type Ingamentioning

confidence: 81%

Development and Characterization of High-Quality HfO₂/InGaAs MOS Interface

Eom¹,

Kong²,

Seo³

2020

Recent Advances in Nanophotonics - Fundamentals and Applications

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The scope of this chapter is to introduce a highly efficient HfO2 atomic layer deposition (ALD) process with superior interface defect characteristics that can be applied on high-mobility III-V substrates. For a long time, the major academic research of III-V metal-oxide-semiconductor (MOS) studies was mainly oriented on searching for the suitable high-k dielectric, and among the reported high-k/III-V MOS studies, Al2O3 and AlN have demonstrated the most promising results. However, usually, the dielectrics with higher dielectric constant suffered from more defective interface quality including the HfO2, which should be overcome to meet the intensive operation voltage scaling requirements. In order to protect the interface of the HfO2/III-V MOS, the exposed III-V surface has to be carefully treated before, while, and after the whole high-k deposition process. For this purpose, the effect of isopropyl alcohol precursor and in situ cyclic nitrogen plasma treatment on the HfO2 ALD process at III-V substrates was thoroughly investigated. Remarkable interface state density levels with strong inversion behavior were achieved, which have not been observed at the previous HfO2/InGaAs studies. Also, detailed analysis of the interface characteristics was investigated to broaden the understanding of the improvement phenomenon.

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“…The Ga 2 O 3 passivation layer improved the Al 2 O 3 / InGaAs MIS interface properties by reducing the native oxide and terminating Ga 2 O 3 onto the surface. The combination of (NH 4 ) 2 S treatment and Ga 2 O 3 passivation layer revealed superior improvement of the Al 2 O 3 /InGaAs gate stack, which may be due to a reduction of D it both near the conduction band edge [4][5][6] and around the midgap in the Al 2 O 3 / InGaAs MIS structure, respectively.…”

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confidence: 99%

“…The native oxide of III-V MIS generate defects in the form of As-As bonding and Ga dangling bonds, which causes a high interface trap density (D it ), and introduces strong Fermi-level pinning and severe deterioration of channel mobility. 1,2) Therefore, several oxide removal techniques such as aqueous HCl and NH 4 OH etching, 3) sulfur passivation, [4][5][6] selenium passivation, 7) self-cleaning with Al(CH 3 ) 3 (trimethylaluminum; TMA), [8][9][10][11][12] and H 2 plasma cleaning, 13) have been reported for the improvement of the GaAs and InGaAs channel properties. In addition to oxide removal, further surface passivation techniques such as plasma nitridation 14,15) and epitaxial Si passivation 16) have been proposed to control the anion composition at the MIS interface.…”

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Self-limiting growth of ultrathin Ga₂O₃for the passivation of Al₂O₃/InGaAs interfaces

Jevasuwan¹,

Maeda²,

Miyata³

et al. 2013

Appl. Phys. Express

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Ga2O3 film growth on InGaAs substrates was investigated using an atomic layer deposition system with trimethylgallium (TMGa) and H2O as precursors. Self-limiting growth of Ga2O3 was confirmed on InGaAs substrates as well as on Si and GaAs. During initial formation of the Ga2O3 film on an InGaAs substrate, the selective self-cleaning effect of TMGa on AsOx and GaOx was observed. The insertion of ultrathin Ga2O3 into an Al2O3/InGaAs gate stack as an interfacial passivation layer proved quite effective to reduce Dit around the midgap. The Al2O3/InGaAs MISFET performance also revealed improvement of the effective mobility for both NH4OH- and (NH4)2S-treated devices.

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Effect of sulfur treatment on HfO<sub>2</sub>/InGaAs MOS interfaces properties

Cited by 6 publications

References 1 publication

High Performance Extremely Thin Body InGaAs-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates with Ni–InGaAs Metal Source/Drain

High Performance Extremely Thin Body InGaAs-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates with Ni–InGaAs Metal Source/Drain

Development and Characterization of High-Quality HfO₂/InGaAs MOS Interface

Self-limiting growth of ultrathin Ga₂O₃for the passivation of Al₂O₃/InGaAs interfaces

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Effect of sulfur treatment on HfO<sub>2</sub>/InGaAs MOS interfaces properties

Cited by 6 publications

References 1 publication

High Performance Extremely Thin Body InGaAs-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates with Ni–InGaAs Metal Source/Drain

High Performance Extremely Thin Body InGaAs-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates with Ni–InGaAs Metal Source/Drain

Development and Characterization of High-Quality HfO2/InGaAs MOS Interface

Self-limiting growth of ultrathin Ga2O3for the passivation of Al2O3/InGaAs interfaces

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Development and Characterization of High-Quality HfO₂/InGaAs MOS Interface

Self-limiting growth of ultrathin Ga₂O₃for the passivation of Al₂O₃/InGaAs interfaces