Effect of surface carrier concentration on valence subbands in Si(111)p-type inversion layers: Angle-resolved photoemission spectroscopy

Abstract

We investigated the effect of surface carrier concentration on the quantum levels and the in-plane effective masses of the subbands in Si͑111͒ p-type inversion layers. Two inversion layers with different surface carrier concentrations were made as a result of metallic surface structures. The subband dispersion was measured by angle-resolved photoelectron spectroscopy. The energy levels of the observed subbands at k = 0.0 Å −1 partially agree with the results of the calculation using the triangular approximation. The effective masses are not significantly affected by the surface carrier concentration. The spatial extension of the subband wave functions is discussed.

Effect of the Flash Annealing on the Impurity Distribution and the Electronic Structure in the Inversion Layer

“…Hole subbands, quantized electronic structure confined in silicon inversion layer (IL), has been recently observed by ARPES in the system of In/Si(111) [1,2], Pb/Si(111) [3], PbGa/Si(111) [4] and Pb/Si(001) [5]. The subband dispersion structures were clearly detected in these works.…”

“…∆ Si3p is the shift of the valence band maximum at the surface between Si(111)7 × 7 and Si(111) √ 3 × √ 3-Pb. It is evaluated using the Si 3p peak shift [3] and obtained to be 0.54 eV in this work. Comparison of the band bending between the samples before flash annealing and after flash annealing (flash annealing times; 300 times) was shown in Fig.…”

Accurate ground-state variational wavefunction for the two-dimensional electron gas

“…Thus if high precision is desired, we can use the new with λ min wavefunction; and in most cases of applications, we can use the new with λ = 1 wavefunction for all quantities can be evaluated and reduced into simple forms. Considering the triangular approximation for electric potential is widely used in many works [1][2][3][4][19][20][21][22][23][24][25] …”

“…[8][9][10][11] The energy level separations of the quantum levels were measured by intersubband optical-absorption [12][13][14] inelastic light scattering, 15,16 and photoconductivity measurements. 17,18 Recently, Takeda et al 19 reported experimental results of valence-subband structures under two different surface carrier concentrations (n s ). The change in n s was achieved by altering the substrate metal which acts as the built-in electrode.…”

Empirical potential profile model for subbands with unusual energy separation in Si(111) p-type inversion layer

“…1(a), 1(b)] has been reported using ultra-violet photoelectron spectroscopy. [8][9][10][11][12][13][14] Through the studies, some of the observed subbands quantum levels were found to be inconsistent with the result of the triangular potential approximation (TPA) calculation. In the TPA, the band edge profile V(z) in the space charge layer is approximated to a linear line so that the subband energy levels are obtained analytically.…”