Effect of surface treatment on an <i>n</i>-CdSe0.6Te0.4 thin-film photoanode/polysulphide electrolyte solar cell

Das, V. Damodara; Damodare, Laxmikant

doi:10.1063/1.363913

Cited by 42 publications

(4 citation statements)

References 22 publications

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“…The large grain size leads to the reduction of the grain boundary area of thin films with important consequences for efficient energy conversion. The low resistivity of the photoelectrode is required to minimize the series resistance of the cell [9]. Photoconducting antimony trisulfide thin films are generally prepared by vacuum evaporation or by a sintering technique using powdered Sb 2 S 3 as the starting material [10,11].…”

Section: Introductionmentioning

confidence: 99%

Structure and optical properties of chemically deposited Sb₂S₃thin films

Salem¹,

Selim²

2000

J. Phys. D: Appl. Phys.

167

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Chemical bath deposition was used to prepare antimony trisulfide (Sb2S3) thin films, of different particle size and with noticeably different band gaps, onto glass substrates. The structural investigations revealed that the as-deposited films are amorphous in nature. The particle size determined from the intercept method using SEM micrographs increases from 20 nm to 100 nm as the duration of the deposition increases. The optical absorption edge shifted from the bulk energy gap of 2.2 to 3.8 eV on decreasing the particle size. This phenomenon is interpreted in terms of the quantum size effect of electrons and holes in Sb2S3 nanoparticles. The optical constants of the Sb2S3 thick films (589 nm) were determined from the interference maxima and minima in the wavelength range 400-2500 nm using the Swanepole method. The Wemple-DiDmenico single-oscillator model parametrizes the refractive index.

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Section: Introductionmentioning

confidence: 99%

Structure and optical properties of chemically deposited Sb₂S₃thin films

Salem¹,

Selim²

2000

J. Phys. D: Appl. Phys.

167

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“…4 shows the J-V characteristics of the solar cell modeled using SCAPS. The fill factor (FF) and efficiency () of Al:ZnO/Si solar cell are calculated from relations (3) and ( 4), respectively [13,14]:…”

Section: Methodsmentioning

confidence: 99%

Design of Al:ZnO/p-Si Heterojunction Solar Cell Using SCAPS Simulation Program

Najim¹,

Muhammed²,

Pogrebnjak³

2021

J. Nano- Electron. Phys.

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ZnO thin film is a prominent candidate to be used as a buffer layer in silicon solar cells. In this paper, the effect of Al concentrations (1, 5, 10 wt. %) on the conversion efficiency of Al:ZnO/Si thin film solar cells has been investigated through simulation by SCAPS program. It has been found that the main photovoltaic parameters such as open-circuit voltage, short-circuit current density, fill factor, conversion efficiency, quantum efficiency and ideality factor increased as Al enrichment occurred. At 10 wt. % of Al the optimum conversion efficiency was approximately 7 %, the maximum value of the ideality factor was 17.51, and the bandgap value was 3.56 eV. Additionally, the resistivity, carrier concentration and mobility were determined for all measurements. It has been found that a decrease in the Hall coefficient led to an increase in the carrier concentration with increasing Al content, while an increase in the mobility occurred due to a decrease in the electrical resistivity. The quantum efficiency of the solar cell measured at a wavelength in the range of 400-1000 nm was between 0.4-0.5.

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“…Presently, one of the best materials for tailoring of band gaps is from the group of Cd-chalcogenide [15,16].…”

Section: Introductionmentioning

confidence: 99%