2019
DOI: 10.1149/2.0171905jss
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Effect of Surfactant Based Abrasive Free Slurry on CMP Polishing Rate and Planarization of Semi-Polar (11‒22) GaN Surface

Abstract: An abrasive free slurry has been formulated using ionic and non-ionic surfactants with KMnO4 as an oxidiser. Subsequently, the effect of these surfactants on the material removal rate (MRR) and surface planarity of semi-polar (11‒22) GaN surface have been studied using chemical mechanical planarization (CMP) process. The formulated polishing slurries were characterized for their rheological properties such as shear thickening, thinning and viscosity as a function of shear rate. It was found that the polishing … Show more

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Cited by 7 publications
(2 citation statements)
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“…2 Nevertheless, the state of lattice defects on substrate surface has measurable influence on the characteristics of mounted electronic components. 3 Additionally, next-generation wide gap semiconductor substrates, such as typical hard-to-process materials SiC 3,4 and GaN, 5,6 take exceedingly long time in finishing process to obtain smooth surface with high precision at high efficiency. [5][6][7] CMP process can remove the surface defects and subsurface damage, 1,8 and realize high material removal rate under suitable conditions.…”
mentioning
confidence: 99%
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“…2 Nevertheless, the state of lattice defects on substrate surface has measurable influence on the characteristics of mounted electronic components. 3 Additionally, next-generation wide gap semiconductor substrates, such as typical hard-to-process materials SiC 3,4 and GaN, 5,6 take exceedingly long time in finishing process to obtain smooth surface with high precision at high efficiency. [5][6][7] CMP process can remove the surface defects and subsurface damage, 1,8 and realize high material removal rate under suitable conditions.…”
mentioning
confidence: 99%
“…3 Additionally, next-generation wide gap semiconductor substrates, such as typical hard-to-process materials SiC 3,4 and GaN, 5,6 take exceedingly long time in finishing process to obtain smooth surface with high precision at high efficiency. [5][6][7] CMP process can remove the surface defects and subsurface damage, 1,8 and realize high material removal rate under suitable conditions. Consequently, CMP process plays an extremely important role during semiconductor processing technologies, and is receiving much more attentions.…”
mentioning
confidence: 99%