Effect of switching from high to low dose rate on linear bipolar technology radiation response

Boch, J.; Saigné, Frédéric; Schrimpf, R.D.; Fleetwood, D.M.; Ducret, S.; Dusseau, L.; David, Jean‐Pierre; Fesquet, J.; Gasiot, J.; Ecoffet, R.

doi:10.1109/tns.2004.835047

Cited by 39 publications

(18 citation statements)

References 21 publications

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“…As previously mentioned [3], the degradation rate of the switched devices follows the low-dose-rate behavior immediately after the dose rate is switched. Whatever the total dose at which the switch occurs, any subsequent low-dose-rate irradiation gives the same shape as an irradiation conducted entirely at low dose rate.…”

Section: Switching Experimentalmentioning

confidence: 59%

“…The low-and high-dose-rate irradiations are plotted with solid symbols. The three sets of open symbols correspond to devices irradiated first at high dose rate (175 rad(SiO )/s up to 10, 31 and 84 krad(SiO )) and then switched to low dose rate [3]). The three sets of switched devices are first irradiated at high dose rate (175 rad(SiO )/s) up to 10, 31 and 84 krad(SiO ), then irradiated at the low dose rate (0.0595 rad(SiO )/s).…”

Section: Switching Experimentalmentioning

confidence: 99%

“…The last region observed for some devices and for high total doses corresponds to a saturation of the degradation. If irradiation continues beyond this saturation region, recovery Manuscript can occur for some devices [3]- [6]. It has also been shown that during switching experiments (that is, a high-dose-rate irradiation followed by a low-dose-rate irradiation) the degradation rate of devices after the switch is equal to the degradation rate recorded for low dose rate.…”

mentioning

confidence: 98%

“…For this reason the evaluation of the device degradation in the space environment is difficult to estimate using a high-dose-rate irradiation. In previous work, a new approach was proposed [3]. This approach is based on the observation of the device-degradation curve with total dose for the considered ICs.…”

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confidence: 99%

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Estimation of low-dose-rate degradation on bipolar linear integrated circuits using switching experiments

Boch

Saigné²,

Schrimpf³

et al. 2005

IEEE Trans. Nucl. Sci.

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The low-dose-rate response of five bipolar integrated circuits is evaluated on the basis of switching experiments. Such experiments consist of performing first a high-dose-rate irradiation followed by a low-dose-rate irradiation. Based on these experiments, a time-saving method to predict the low-dose-rate degradation of bipolar linear microcircuits is proposed. This approach provides a good estimate of the low-dose-rate degradation.Index Terms-Bipolar technology, dose rate, enhanced low-doserate sensitivity (ELDRS), integrated circuit, switching experiment, total dose.

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Section: Switching Experimentalmentioning

confidence: 59%

Section: Switching Experimentalmentioning

confidence: 99%

mentioning

confidence: 98%

mentioning

confidence: 99%

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Estimation of low-dose-rate degradation on bipolar linear integrated circuits using switching experiments

Boch

Saigné²,

Schrimpf³

et al. 2005

IEEE Trans. Nucl. Sci.

Self Cite

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show abstract

“…The part is considered ELDRS susceptible if the EF is ≥ 1.5, given that the post irradiation parameter is above the pre-irradiation specification limits [1]. Although several accelerated test methods exist, such as the switched-dose rate and elevated temperature irradiation, their applicability is inconsistent, impractical and/or unproven for a large enough sample of circuit types [3]- [4]. The most reliable test method is to irradiate at a dose rate ≤ 10 mrad(Si).…”

Section: Introductionmentioning

confidence: 99%