Effect of Synthesis Conditions on the Structure and Thermoelectric Properties of β-Zn4Sb3-Based Materials

Иванов, А. А.; Bogomolov, D. I.; Бублик, В. Т.; Voronov, M. V.; Lavrentev, M. G.; Panchenko, V. P.; Parkhomenko, Yu. N.; Tabachkova, N. Yu.

doi:10.1007/s11664-020-08056-3

Cited by 4 publications

(7 citation statements)

References 25 publications

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“…It is known that today, there are several methods of preparing Zn-Sb semiconductor intermetallic compounds (see, for example, [1][2][3][4][5][6][7][8][9] and references therein). One of the most convenient methods is to prepare ZnSb powders from them, press them, and then obtain a Zn-Sb semiconductor intermetallic compound with thermal treatment.…”

Section: Methodsmentioning

confidence: 99%

“…It is known that the Zn-Sb intermetallic compound is one of the important semiconductor materials widely used in the field of energy, especially micro and nanoenergy, in transistors, infrared detectors, thermal imaging devices, and magnetic resistance devices (https://en.wikipedia.org/wiki/Zinc_antimonide). Despite the fact that some of its mechanical, thermal and chemical properties are close to metal alloys, its physical properties under certain conditions increase the interest in the preparation of various combination Zn-Sb intermetallic compounds and the study of electro physical and thermoelectric properties [1][2][3][4][5][6][7][8][9][10][11][12]. Currently, the Zn-Sb semiconductor intermetallic compound is considered to be sufficiently studied both theoretically and practically (see, for example, [1][2][3][4][5][6][7][8][9][10][11][12] and references therein).…”

Section: Introductionmentioning

confidence: 99%

“…Despite the fact that some of its mechanical, thermal and chemical properties are close to metal alloys, its physical properties under certain conditions increase the interest in the preparation of various combination Zn-Sb intermetallic compounds and the study of electro physical and thermoelectric properties [1][2][3][4][5][6][7][8][9][10][11][12]. Currently, the Zn-Sb semiconductor intermetallic compound is considered to be sufficiently studied both theoretically and practically (see, for example, [1][2][3][4][5][6][7][8][9][10][11][12] and references therein). Studies show that the electro physical and thermoelectric properties of the compound depend on the physical processes that occur during the preparation of the Zn-Sb semiconductor intermetallic compound.…”

Section: Introductionmentioning

confidence: 99%

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Obtaining granular semiconductor intermetallic compound Zn-Sb and some of its electrical properties

Olimov,

Akhmadaliev

2023

E3S Web of Conf.

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The article discusses the microstructure of the ZnSb intermetallic compound obtained by powder technology and the results of the study of charge transfer processes in it. Also, the article proposes a method of preparing a Zn-Sb intermetallic compound with a stem-shaped polycrystalline structure using powder technology. Semiconductor Zn-Sb polycrystalline structure preparation method is carried out by pressing Zn-Sb particles together, followed by thermal treatment in several stages. It was found that the stages and temperature of heat treatment have a significant effect on its electrophysical properties. Electrical conductivity (σ), charge carrier concentration (n) suddenly decreases with temperature increase at the initial stage of heat treatment. Such a process is not observed in the subsequent stages of heat treatment. At all stages of heat treatment, the mobility of charge carriers (μ) decreases. In this case, the residence time of charge carriers in the crystal lattice is π~1,52÷1,1·10-12 sec. was determined to change between The results of the study were explained on the basis of the influence of intergranular boundary areas on charge transfer processes. Studies show that at T=300÷700 K, the potential barrier height (φ) in the intergranular boundary areas increases linearly with temperature. For example, φ~0,436 eV at the initial stages of thermal treatment at T=300 K, and φ~0,469 eV at later stages, and at T=700 K, it increases to φ~0,92 eV in all cases. It was shown that it depends on the amount of charges trapped in the localized traps in the intergranular boundary regions.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Obtaining granular semiconductor intermetallic compound Zn-Sb and some of its electrical properties

Olimov,

Akhmadaliev

2023

E3S Web of Conf.

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“…In short, a phase diagram plays a crucial role in determining the stoichiometry of β-Zn 4 Sb 3 and depicting the solubility region when a dopant is added. [120] Therefore, the (where σ ¼ 1/ρ), p) thermal conductivity κ(T ) and the inset show the enlarge thermal conductivity. Adapted with permission.…”

Section: Zn 4 Sb 3 -Based Alloysmentioning

confidence: 98%

“…In short, a phase diagram plays a crucial role in determining the stoichiometry of β‐Zn 4 Sb 3 and depicting the solubility region when a dopant is added. [ 120 ] Therefore, the phase diagrams for those Zn 4 Sb 3 ‐based alloys are essential to understand the homogeneity region and phase relation. [ 121 ]…”

Section: Revisiting the State‐of‐the‐art Te Alloys Via Phase Diagram Engineeringmentioning

confidence: 99%

Eliciting High‐Performance Thermoelectric Materials via Phase Diagram Engineering: A Review

Deng

Yen

Tsai

et al. 2021

Adv Energy and Sustain Res

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Alongside the evolution of technology timeline, environmental protection and energy sustainability significantly guide the research feast toward the high-performance green energy resources and technologies. [1,2] Alternatives to the fossil fuels that emit harmful greenhouse gases become desired, in which the thermoelectric (TE) materials have played an inevitable role since the 1960s. [3] One of TE technology features is the waste heat recovery via the Seebeck effect, [4] which allows the conversion between thermal energy and electricity. Such a TE generator produces precious electrical energy from any arbitrary interfaces where a temperature gradient exists, simultaneously boosting energy usage efficiency while eases global warming.Many TE materials are being explored for power generation applications, such as GeTe, [5] PbTe, [6,7] Bi 2 Te 3 , [8] and silicides. [9] Moreover, the TE cooler, which utilizes the Peltier effect, [4] emerges as a vital spot-cooling device assembled by all-solid-state materials. With the advantages of refrigerant-free and size-minimization, the TE cooler exhibits the advantages of refrigerant-free and size-minimization, which can be used as the next-generation cooling technology. [10] After more than 60 years of development, the practical application and potential coverage of TE technology are comprehensive. Nevertheless, a TE material's thermal-to-electric efficiency is still required to be boosted. In general, the TE figure-of-merit zT ¼ ðS 2 σÞT=κ positively relates to the performance of TE materials, in which the S is the Seebeck coefficient, σ ¼ ρ À1 refers to the electrical conductivity, and κ ¼ κ e þ κ L þ κ b comprises the total thermal conductivity κ, lattice thermal conductivity κ, and bipolar thermal conductivity κ b , respectively. Most importantly, the S, σ, and κ e have the carrier concentration n H as a common factor, which correlates and depends on each other. Therefore, the counterbalance between the thermal and electrical transport properties is essential to attain high zT values, which could be fulfilled by band structure engineering, [11] carrier optimization, [12,13] filtering effect, [14] , and so on. In parallel, the reduction in κ L also paves the way toward highperformance TE materials, mainly accomplished by all-scale defect engineering [15] and alloying effect. [16] Those imperfections introduce multiscale roadblocks, such as the interstitial/ antisite defect, dislocations, nanoprecipitates, and grain boundaries, aiming to impede the phonons with different wavelengths.Countless efforts bring the breakthroughs of zT value in succession. The peak zT grows less than unity in the 1960s to greater than 2.5 after 2015, [17] whose progress is slow yet steadily. Complex TE materials with various dopants are the primary targets, while different approaches can be adopted. [18,19] The

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Stability of phase composition and properties of Zn4+xSb3 medium-temperature thermoelectric material

Panchenko,

Bublik,

Ivanov

et al. 2024

Journal of Physics and Chemistry of Solids

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Effect of Synthesis Conditions on the Structure and Thermoelectric Properties of β-Zn4Sb3-Based Materials

Cited by 4 publications

References 25 publications

Obtaining granular semiconductor intermetallic compound Zn-Sb and some of its electrical properties

Obtaining granular semiconductor intermetallic compound Zn-Sb and some of its electrical properties

Eliciting High‐Performance Thermoelectric Materials via Phase Diagram Engineering: A Review

Stability of phase composition and properties of Zn4+xSb3 medium-temperature thermoelectric material

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