Effect of Ta buffer and NiFe seed layers on pulsed-DC magnetron sputtered Ir20Mn80/Co90Fe10 exchange bias

Öksüzoğlu, Ramis Mustafa; Yıldırım, Mustafa; Çınar, Hakan; Hildebrandt, Erwin; Alff, Lambert

doi:10.1016/j.jmmm.2011.02.021

Cited by 21 publications

(6 citation statements)

References 24 publications

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“…To increase the sensitivity, we increased the thickness of the buffer Ta layer in the spin valve with t Cu = 22 Å. It is known that the use of tantalum as the buffer layer with a neighboring layer of permalloy favors the formation of a 〈111〉 texture, an increase in the average grain size in Ta/FeNi layers, and a decrease in the width of the hysteresis loop of the FeNi layer [26] or of the composite FeNi/CoFe free layer [17]. After the increase of the thickness of the buffer layer of Ta from 20 to 50 Å, the width of the free layer hysteresis loop decreased from 11 to 8.7 Oe, and the sensitivity increased from 0.5 to 1.7%/Oe (the average value for the ascending and descending branches of the hysteresis loop).…”

Section: Spin Valves On the Basis Of Antiferromagnetic Mn 75 Ir 25mentioning

confidence: 99%

High-sensitive hysteresisless spin valve with a composite free layer

Ustinov

Milyaev

Наумова

et al. 2012

Phys. Metals Metallogr.

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Method of dc magnetron deposition has been used to prepare metallic nanostructures of the (Si, Al 2 O 3 , glass)/Ta/[NiFe/CoFe]/Cu/CoFe/(FeMn, MnIr)/Ta spin valve type with a composite "free layer" Ni 80 Fe 20 /Co 90 Fe 10 . A three stage method of decreasing hysteresis of the free layer has been suggested. The dependence of the magnitude of the giant magnetoresistance and hysteresis has been investigated depending on the angle between the direction of the easy magnetization axis of the free layer and the direction of the applied magnetic field in the plane of layers. It is shown that in the spin valves studied the hysteresis can be reduced to a few tenths of an oersted at the magnitude of the magnetoresistance more than 8%. In the case of a spin valve with an antiferromagnet Fe 50 Mn 50 the magnetoresistive sensitivity in the range of the hystere sisless variation of the magnetoresistance was equal to 1%/Oe, whereas the maximum sensitivity in the pres ence of a hysteresis exceeded 6%/Oe. A greater sensitivity (2.5%/Oe) at the magnitude of the free layer hys teresis of 0.6 Oe was obtained for spin valves on the basis of the antiferromagnetic Mn 75 Ir 25 alloy. For them, the maximum magnetoresistance was equal to 11.6%.

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Section: Spin Valves On the Basis Of Antiferromagnetic Mn 75 Ir 25mentioning

confidence: 99%

High-sensitive hysteresisless spin valve with a composite free layer

Ustinov

Milyaev

Наумова

et al. 2012

Phys. Metals Metallogr.

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“…As the (111) texture is indispensable for high GMR effects [22], only a portion of the scan including (111) peaks is shown in Figure 4b. The left peaks in the vicinity of 2θ ≈ 41.3° correspond to the ordered L12-IrMn3 cubic (111) reflection [10]. A critical thickness effect can be found at a NiFeCr thickness of 9.3 nm for the film annealed at 270°, below which this (111) reflection peak becomes undetectable.…”

Section: Resultsmentioning

confidence: 94%

“…Different types of seed layers have been explored in earlier studies, such as Ta, NiFe, Ru, NiCr, and NiFeCr [10][11][12][13][14][15][16][17]. Among them, NiFeCr attracts a great deal of attention.…”

Section: Introductionmentioning

confidence: 99%

Reversal of the Pinning Direction in the Synthetic Spin Valve with a NiFeCr Seed Layer

et al. 2022

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The effect of the seed layers on the magnetic properties of the giant magnetoresistance thin films has received a lot of attention. Here, a synthetic spin valve film stack with a wedge-shaped NiFeCr seed layer is deposited and annealed following a zero-field cooling procedure. The film crystallinity and magnetic properties are studied as a function of the NiFeCr seed layer thickness. It is found that the exchange coupling field from the IrMn/CoFe interface and the antiferromagnetic coupling field in the synthetic antiferromagnet both increase as the seed layer thickness increases, indicating the perfection of film texture. In this film, the critical thickness of the NiFeCr seed layer for the formation of the ordered IrMn3 texture is about 9.3 nm. Meanwhile, a reversal of the pinning direction in the film is observed at this critical thickness of NiFeCr. This phenomenon can be explained in a free energy model by the competition effect between the exchange coupling and the interlayer coupling during the annealing process.

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“…The possible oxidation of top layer of NiFe will also influence/prevent the desired (111) orientation of IrMn, which is a key requirement for exchange bias. 32 From the foregoing, we conclude that the AP alignment in the MTJ stack is caused due to the different coercivities of the bottom CoFeB and top CoFeB layers due to the different underlayers (IrMn for the bottom CoFeB layer and MgO for the top CoFeB). Although the two AP magnetic states corresponding to Àve H and þve H branches of the R-H loop are not separated distinctly at 300 K, they are, however, well separated at 25 K as shown in Figures 5(a)-5(c).…”

Section: Figures 3(a)-3(c)mentioning

confidence: 79%

Inelastic tunneling conductance and magnetoresistance investigations in dual ion-beam sputtered CoFeB(110)/MgO/CoFeB (110) magnetic tunnel junctions

Singh

Chaudhary

2014

Journal of Applied Physics

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Articles you may be interested inEffect of annealing on the temperature dependence of inelastic tunneling contributions vis-à-vis tunneling magnetoresistance and barrier parameters in CoFe/MgO/NiFe magnetic tunnel junctions J. Appl. Phys. 115, 083904 (2014); 10.1063/1.4866078 80% tunneling magnetoresistance at room temperature for thin Al-O barrier magnetic tunnel junction with CoFeB as free and reference layers

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Effect of Ta buffer and NiFe seed layers on pulsed-DC magnetron sputtered Ir20Mn80/Co90Fe10 exchange bias

Cited by 21 publications

References 24 publications

High-sensitive hysteresisless spin valve with a composite free layer

High-sensitive hysteresisless spin valve with a composite free layer

Reversal of the Pinning Direction in the Synthetic Spin Valve with a NiFeCr Seed Layer

Inelastic tunneling conductance and magnetoresistance investigations in dual ion-beam sputtered CoFeB(110)/MgO/CoFeB (110) magnetic tunnel junctions

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