2019
DOI: 10.1016/j.jallcom.2019.04.142
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Effect of tantalum on the temperature dependent electrical characteristics of NaNb1−Ta O3 (0.0 x 0.3) ceramics between 400 and 560 °C

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Cited by 20 publications
(3 citation statements)
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“…This modification reduced the dielectric loss and increased volume resistivity by substituting Nb 5+ cations with Ta 5+ cations at a concentration in the compound (Na 0.8 Bi 0.1 )(Nb 0.9−x Ta x Ti 0.1 )O 3 (where x = 0.15) [108]. Such improvements have also been observed in various niobate ceramics, underscoring the broader applicability of this approach [109,110]. The improved volume resistivity of these ceramics contributes significantly to energy economy and E max in energy storage applications [10].…”
Section: Chemical Dopingmentioning
confidence: 82%
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“…This modification reduced the dielectric loss and increased volume resistivity by substituting Nb 5+ cations with Ta 5+ cations at a concentration in the compound (Na 0.8 Bi 0.1 )(Nb 0.9−x Ta x Ti 0.1 )O 3 (where x = 0.15) [108]. Such improvements have also been observed in various niobate ceramics, underscoring the broader applicability of this approach [109,110]. The improved volume resistivity of these ceramics contributes significantly to energy economy and E max in energy storage applications [10].…”
Section: Chemical Dopingmentioning
confidence: 82%
“…Ta Ti (where x = 0.15) [108]. Such improvements have also been observed in various n ceramics, underscoring the broader applicability of this approach [109,110]. The imp volume resistivity of these ceramics contributes significantly to energy economy and in energy storage applications [10].…”
Section: Chemical Dopingmentioning
confidence: 86%
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