Effect of Tantalum Substitution on Dielectric Constant of ZnSb_2-xTa_xO₆ Solid Solution (x=0.0,0.1,0.25,0.75,1.6)

Abstract

The electrical measurements of ZnSb2−xTaxO6 phases with x = 0.0, 0.1, 0.25, 0.75, 1.6 have revealed insulating behavior with strongly decreasing electrical conductivity when tantalum x content is increased. As a consequence, high values of relative permittivity εr and loss tangent tan(δ) were observed, that decreased with increase of temperature and frequencies, for samples with low Ta content, below x = 0.75. In turn, for samples richer in tantalum, εr reaches 14, and tan(δ) becomes as low as 0.02 for x = 1.6. These effects have been interpreted either by the framework of the relaxation processes, or by the spatial charge polarization leading to the low energy loss of materials.