Effect of temperature and incident ion energy on nanostructure formation on silicon exposed to helium plasma

Thompson, Matt; Shi, Quan; Kajita, Shin; Ohno, Noriyasu; Corr, Cormac

doi:10.1002/ppap.202000126

Cited by 7 publications

(3 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Recently, to fabricate black silicon, plasma irradiation has been employed with some distinct advantages, such as simple process, economical, and soft for the Si substrate [15,16]. Nonetheless, the morphology and the uniformity of the Si surface are still difficult to control [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

The dependence of Mo ratio on the formation of uniform black silicon by helium plasma irradiation

Shi¹,

Kajita²,

Feng³

et al. 2021

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

Reducing the optical reflection of silicon (Si) material is a crucial issue on the surface of solar cells and other photonic applications. Fabrication of nanocone structures on the Si surface (black Si) by plasma (helium or argon) irradiation is a novel technique in recent decades with advantages, such as simple, economical, and harmless to the Si substrate. However, the uniformity and controllability of the surface remain problematic. In this study, uniform black silicon was obtained by low energy (<50 eV) helium ion irradiation with auxiliary Mo co-deposition. The characteristics of the nanocone show a clear relation with the Mo ratio. Deposited Mo was found to accumulate on the cone body, especially on the tip, and it worked as a nano mask to induce the formation of the nanocone and protect it from sputtering. The surface with high and large diameter nanocones possesses low reflectances of roughly 2%. The study of the relation between Mo ratio, characteristics of the nanostructure, and the reflectance of the surface raises a potential method of surface tailoring.

show abstract

Section: Introductionmentioning

confidence: 99%

The dependence of Mo ratio on the formation of uniform black silicon by helium plasma irradiation

Shi¹,

Kajita²,

Feng³

et al. 2021

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Kajita et al have observed cone structure, of which He bubbles on the tip, on titanium and stainless steel [6,7]. As for the Si material, dense nanocone was formed with crystal nature remained at low energy (<100 eV) of He plasma [8][9][10]. Recently, we found that the formation of nanocone structure was strongly affected by the deposition of impurity on the Si surface [11].…”

Section: Introductionmentioning

confidence: 90%

Modeling of the impurity-induced silicon nanocone growth by low energy helium plasma irradiation

Shi¹,

Kajita²,

Dai³

et al. 2021

Plasma Sci. Technol.

Self Cite

View full text Add to dashboard Cite

The formation mechanism of nanocone structure on silicon (Si) surface irradiated by helium plasma has been investigated by experiments and simulations. Impurity (molybdenum) aggregated as shields on Si was found to be a key factor to form a high density of nanocone in our previous study. Here to concrete this theory, a simulation work has been developed with SURO code based on the impurity concentration measurement of the nanocones by using electron dispersive x-ray spectroscopy. The formation process of the nanocone from a flat surface was presented. The modeling structure under an inclining ion incident direction was in good agreement with the experimental result. Moreover, the redeposition effect was proposed as another important process of nanocone formation based on results from the comparison of the cone diameter and sputtering yield between cases with and without the redeposition effect.

show abstract

“…It was found that He plasma irradiation leads to the formation of black Si with nanocones on the surface. [29][30][31][32][33] Unlike metals, on Si, whose bandgap is 1.1 eV, He bubbles may not play a major role in the morphological change. Rather, in addition to adatom diffusion, 30) a small amount of impurity deposition formed clusters on the surface and started to form protrusion, leading to the nanocones.…”

Section: Introductionmentioning

confidence: 99%

Germanium nanostructures by helium plasma irradiation

Kajita,

Shi,

Tabata

et al. 2024

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

The effects of helium plasma irradiation, which has been widely studied on metals, on germanium have been experimentally investigated. The irradiation temperature ranges from 430 to 720~K, and the incident ion energy ranges from 30 to 100~eV.From the scanning electron microscope (SEM) observation, it was found that various morphology changes including pits, nanocones, nanopillars and roughened surface occur. The spatial scale of the morphology change was analyzed applying Fast Fourier Transform (FFT) to SEM micrographs. Thermal desorption spectroscopy (TDS) analysis suggested that He atoms implanted on Ge play major roles to form roughened surface at the surface temperature higher than 500~K. 

show abstract

Effect of temperature and incident ion energy on nanostructure formation on silicon exposed to helium plasma

Cited by 7 publications

References 40 publications

The dependence of Mo ratio on the formation of uniform black silicon by helium plasma irradiation

The dependence of Mo ratio on the formation of uniform black silicon by helium plasma irradiation

Modeling of the impurity-induced silicon nanocone growth by low energy helium plasma irradiation

Germanium nanostructures by helium plasma irradiation

Contact Info

Product

Resources

About