Effect of temperature cycling on the leakage mechanism of TSV liner

Chen, Si; Jian, Xiaodong; Li, Kai; Li, Guoyuan; Wang, Zhizhe; Yang, Xiaofeng; Fu, Zhiwei; Wang, Hongyue

doi:10.1016/j.microrel.2022.114889

Cited by 4 publications

(1 citation statement)

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“…This provides important insights for understanding and optimizing the electromigration performance of TSV interconnect structures. Chen et al [11] investigated the failure locations of TSV electromigration and used finite element methods to predict the failure locations of individual TSVs. This approach provides a robust tool for identifying potential failure points.…”

Section: Introductionmentioning

confidence: 99%

Research on Crystal Structure Evolution and Failure Mechanism during TSV-Metal Line Electromigration Process

Gong,

Xie,

Chen

et al. 2023

Crystals

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The combined use of Through Silicon Via (TSV) and metal lines, referred to as TSV-metal lines, is an essential structure in three-dimensional integrated circuits. In-depth research into the electromigration failure mechanism of TSV and the microstructure evolution can serve as theoretical guidance for optimizing three-dimensional stacking. This article conducted electromigration experiments on TSV-metal line structural samples at current densities of 1.0 × 105 A/cm2, 5 × 105 A/cm2, and 1 × 106 A/cm2. Additionally, Electron Back Scattered Diffraction (EBSD) technology was employed to systematically investigate the microstructural evolution of the TSV-metal line structure profiles before and after the application of electrical testing. The results indicate that the current induces a change in the crystal orientation at the TSV-metal interface (TSV/metal interface) and the bottom metal line. This phenomenon notably depends on the initial angle between the grain orientation and the current flow direction. When the angle between the current direction and the grain orientations [001] and [010] is relatively large, the crystals are more likely to deviate in the direction where the angle between the grain orientation and the current is smaller. This is because, at this point, the current direction is precisely perpendicular to the <100> crystal plane family, where the atomic density is lowest, and the energy required for electron transport is minimal. Therefore, the current readily rotates in the direction of this crystal orientation. Before the electromigration tests, areas with a high level of misorientation were primarily concentrated at the TSV/metal interface and the corners of the TSV-metal line. However, these areas were found to be more prone to developing voids after the tests. It is conjectured that the high misorientation level leads to elevated stress gradients, which are the primary cause of cracking failures in the TSV-metal line. As the current density increases from 5 × 105 A/cm2 to 1 × 106 A/cm2, the electromigration failure phenomena in the TSV become even more severe.

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Section: Introductionmentioning

confidence: 99%