Effect of Temperature Jump on Nonequilibrium Entropy Generation in a MOSFET Transistor Using Dual-Phase-Lagging Model

Abstract

This paper investigates the effect of temperature-jump boundary condition on nonequilibrium entropy production under the effect of the dual-phase-lagging (DPL) heat conduction model in a two-dimensional sub-100 nm metal-oxide-semiconductor field effect transistor (MOSFET). The transient DPL model is solved using finite element method. Also, the influences of the governing parameters on global entropy generation for the following cases—(I) constant applied temperature, (II) temperature-jump boundary condition, and (III) a realistic MOSFET with volumetric heat source and adiabatic boundaries—are discussed in detail and depicted graphically. The analysis of our results indicates that entropy generation minimization within a MOSFET can be achieved by using temperature-jump boundary condition and for low values of Knudsen number. A significant reduction of the order of 85% of total entropy production is observed when a temperature-jump boundary condition is adopted.

Analysis of Temperature-Jump Boundary Conditions on Heat Transfer for Heterogeneous Microfluidic Immunosensors

“…The study of fluid flow and heat transfer in microsystems requires taking into account the effect of rarefaction, which appears when the number of Knudsen, which is the ratio of the mean free path to the hydraulic diameter, is between 10 −3 and 10 −1 . The first-order temperature-jump boundary condition [ 41 , 42 , 43 , 44 , 45 ] is widely used to solve the heat equation: where T w is the wall temperature, is the energy accommodation coefficient, γ is the ratio of the specific heat capacities, is the Prandtl number, Λ is the mean free path, and is the temperature gradient normal to the surface.…”

“…The study of fluid flow and heat transfer in microsystems requires taking into account the effect of rarefaction, which appears when the number of Knudsen, which is the ratio of the mean free path to the hydraulic diameter, is between 10 −3 and 10 −1 . The first-order temperature-jump boundary condition [41][42][43][44][45] is widely used to solve the heat equation:…”

Numerical simulation of Gate shape effect on Self-Heating in nano-MOSFET Transistors with high-k dielectric

“…The intensive scaling of MOSFET transistors requires the thinning of the SiO2 gate oxide which induces significant gate tunnels leading to power loss, increased power consumption, and generation of excess heat [1][2][3][4][5][6]. The increase of drain current caused by the low dissipation capacity of the dioxide SiO2 [7] results an increase in self-heating effect (SHE) [8].…”

“…In order to study the self-heating effect (SHE) in nano electronic components, several electrothermal models have been developed and used [5,6,9,[16][17][18]. Belkhiria et al [16] have analyzed the SHE in the gate-all-around-Field-Effect Transistor (GAAFET) using on the Cattaneo and Vernotte (CV) heat conduction model.…”

“…Belkhiria et al [16] have analyzed the SHE in the gate-all-around-Field-Effect Transistor (GAAFET) using on the Cattaneo and Vernotte (CV) heat conduction model. Echouchene et al [5,6] have investigated the entropy generation in MOSFET transistor using the dual-phase-lag (DPL) model. They have shown that the entropy generation cannot be described using the classical form of the equilibrium entropy production and an oscillatory behavior in transient entropy generation obtained using DPL model in a real MOSFET transistor.…”