1995
DOI: 10.1007/bf02676814
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Effect of temperature on InGaAsP alloy composition

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Cited by 12 publications
(10 citation statements)
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“…Generally, compositional uniformity is evaluated by measuring the mapping data of photoluminescence (PL) wavelength. Lum reported the relative order and magnitude of temperature sensitivity of PL wavelength for the different quaternary compositions [3]. Some high compositional uniformity results were reported for InGaAsP/InP epitaxial layers with PL wavelength of 1.3 mm.…”
Section: Introductionmentioning
confidence: 94%
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“…Generally, compositional uniformity is evaluated by measuring the mapping data of photoluminescence (PL) wavelength. Lum reported the relative order and magnitude of temperature sensitivity of PL wavelength for the different quaternary compositions [3]. Some high compositional uniformity results were reported for InGaAsP/InP epitaxial layers with PL wavelength of 1.3 mm.…”
Section: Introductionmentioning
confidence: 94%
“…P-rich at the wafer edges. It is considered that temperature at the wafer edge is higher than that at the wafer center because it is reported that As/P composition in the InGaAsP epitaxial layer is very sensitive to the temperature and higher temperatures result in the P-rich composition [3,10]. The PL peak wavelength distribution of 1.3 mm quaternary layers grown by using the optimized wafer carrier was shown in Fig.…”
Section: Computational Analysismentioning
confidence: 99%
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“…It was suggested that temperature at the wafer edges was relatively higher than that at the wafer center. It was reported that As/P composition in the InGaAsP epitaxial growth was very sensitive to the temperature, and higher temperatures resulted in the P-rich composition [2]. It was well known that the PL wavelength changed to shorter wavelengths with increasing the growth temperature for the InGaAsP quaternary composition.…”
Section: Article In Pressmentioning
confidence: 99%
“…The high compositional uniformity of the epitaxial layers is required for the increasing size and complexity of InGaAsP/InP-based photonic integrated components [1]. One of the major factors of the deterioration of the compositional uniformity in the wafer edge region is the temperature difference on the wafer surface [2], i.e. higher at the edge and lower at the center of the wafer.…”
Section: Introductionmentioning
confidence: 99%