Effect of temperature on luminance-current characteristics of the InGaN light-emitting diode’s structure

Herein, a physical and mathematical model of the voltage−current characteristics of a p−n heterostructure with quantum wells (QWs) is prepared using the Sah−Noyce−Shockley (SNS) recombination mechanism to show the SNS recombination rate of the correction function of the distribution of QWs in the space charge region of diode configuration. A comparison of the model voltage−current characteristics (VCCs) with the experimental ones reveals their adequacy. The technological parameters of the structure of the VCC model are determined experimentally using a nondestructive capacitive approach for determining the impurity distribution profile in the active region of the diode structure with a profile depth resolution of up to 10 Å. The correction function in the expression of the recombination rate shows the possibility of determining the derivative of the VCCs of structures with QWs with a nonideality factor of up to 4.

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Effect of temperature on luminance-current characteristics of the InGaN light-emitting diode’s structure

Cited by 2 publications

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Doping Profile Meter for Semiconductor Structures

Doping Profile Meter for Semiconductor Structures

Physico−mathematical model of the voltage−current characteristics of light-emitting diodes with quantum wells based on the Sah−Noyce−Shockley recombination mechanism

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