2022
DOI: 10.3390/inorganics10050061
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Effect of Temperature on the Adhesion and Bactericidal Activities of Ag+-Doped BiVO4 Ceramic Tiles

Abstract: The aim of this research was to study the effect of temperature on the adhesion and disinfection activities of an Ag+-doped BiVO4 (Ag+/BiVO4) coating. Ag+/BiVO4 was prepared by a sol–gel method, and spraying was used as the deposition method of coating. X-ray diffraction patterns showed that the monoclinic scheelite phase of the samples was unchanged by annealing at 450–650 °C. Scanning electron microscopy results showed that, at high temperatures, the particles melted and formed a dense coating, and the rough… Show more

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Cited by 7 publications
(3 citation statements)
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“…Among the samples, that which was annealed at 650 • C demonstrated the highest coating adhesion. Furthermore, it effectively eliminated Escherichia coli, Staphylococcus aureus, Shigella, and Salmonella bacteria after just 2 h of visible-light irradiation [23,24].…”
Section: Effect Of Temperature On the Adhesion And Bactericidal Activ...mentioning
confidence: 99%
See 1 more Smart Citation
“…Among the samples, that which was annealed at 650 • C demonstrated the highest coating adhesion. Furthermore, it effectively eliminated Escherichia coli, Staphylococcus aureus, Shigella, and Salmonella bacteria after just 2 h of visible-light irradiation [23,24].…”
Section: Effect Of Temperature On the Adhesion And Bactericidal Activ...mentioning
confidence: 99%
“…Disinfection experiments were conducted to evaluate the antimicrobial properties of the samples. It was found that the silver-modified samples exhibited effective disinfection activity within the annealing temperature range of 450-650 • C [23].…”
Section: Effect Of Temperature On the Adhesion And Bactericidal Activ...mentioning
confidence: 99%
“…BiVO 4 is also a metal oxide semiconductor material. Because it is composed of relatively abundant elements in the earth, it is an n-type semiconductor material with a band gap value of about 2.4 eV [26,27]. It has a band edge position suitable for oxygen evolution reaction (OER), which can effectively absorb visible light and become a potential photoanode material [28,29].…”
Section: Introductionmentioning
confidence: 99%