Effect of Temperature on the Electronic Current of AlGaN/GaN High Electron Mobility Transistors (HEMT)

Abstract

An analytical-numerical model for the electronic current of two dimensional quantum well AlGaN/GaN in high electron mobility transistors has been developed in this paper that is capable of accurately predicting the effect of temperature on the electronic current of two dimensional quantum well. Salient futures of the model are incorporated of fully and partially occupied sub-bunds in the interface quantum well. In addition temperature dependent of band gap, quantum well electron density, threshold voltage, mobility of electron, dielectric constant, polarization induce charge density in the device are also taken into account. The calculated model results are in very good agreement with existing experimental data for high electron mobility transistors device.