Effect of ternary mixed crystals on interface optical phonons in wurtizte InxGa1−xN/GaN quantum wells

Abstract

The effect of ternary mixed crystals on the interface optical phonons in wurtizte In x Ga 1Àx N/GaN quantum wells is studied based on the modified random-element isodisplacement model and dielectric continuum model. The results show that the interface optical phonons appear different frequency range with different indium concentration. The frequencies of interface optical phonons in the high frequency range decrease almost linearly with increasing indium concentration and do not vary almost linearly in the low frequency range. The indium concentration has more important effect on the electron-phonon interaction in low frequency range. V

Hole-Confined Polar Optical Phonon Interaction in Al0.35Ga0.65As/GaAs/Al0.25Ga0.75As Quantum Wells

“…In this paper, we calculate the valence band structure using the 6x6 Luttinger-Kohn Hamiltonian, taking into account the warping in Al 0.35 Ga 0.65 As/GaAs/Al 0.25 Ga 0.75 As asymmetric quantum well [20,21] within the k.p method due to its simplicity and accuracy [22], whereas to describe the phonons in the quantum well, we use the dielectric continuum model which has been used by several authors [23][24][25][26][27], and given excellent results compared to the experimental results [28,29]. In addition, we investigate hole confined phonon scattering rates for different quantum well widths and the results are discussed.…”