Effect of texture on 4H–SiC substrate surface on film growth: A molecular dynamics study

Crystal Structure and Surface Morphology of GaN Thin Films Grown on Different Patterned AlN Substrate Surfaces

“…According to Figure 4a, the variation in the substrate patterns results in distinct critical thicknesses. Film density is paramount in materials science and engineering applications because it can affect the physical properties and behavior of a film; it can be expressed as follows 30,34 :…”

“…Film density is paramount in materials science and engineering applications because it can affect the physical properties and behavior of a film; it can be expressed as follows , : ρ = m L x L y L z where m denotes the film mass and L x , L y , and L z denote the film length, width, and thickness, respectively. The densities of the GaN thin films deposited on different substrate surfaces were investigated (Figure b).…”

“…Meanwhile, only one type of dislocation, b = 1/3 < 1–1 0 0>, appeared on DPS and FPS. It is well known that the probability of a dislocation occurring is determined by its Burgers vector, and since b = 1/3 <1–1 0 0> partial dislocation have smaller vectors, they are the most common type . Film dislocation density is a key parameter describing the distribution and properties of dislocations in thin films, which can be characterized by ρ and calculated as follows: ρ = L V where L denotes the total length of the dislocations and V denotes GaN thin film volume.…”

“…It is well known that the probability of a dislocation occurring is determined by its Burgers vector, and since b = 1/3 <1–1 0 0> partial dislocation have smaller vectors, they are the most common type . Film dislocation density is a key parameter describing the distribution and properties of dislocations in thin films, which can be characterized by ρ and calculated as follows: ρ = L V where L denotes the total length of the dislocations and V denotes GaN thin film volume. The dislocations that appeared in the films were further analyzed by comparing the dislocation densities on the four different substrate surfaces (Figure c).…”

“…The time step was set to 1 fs to achieve high-precision simulation results and save significant computational time. 30 Potential functions are essential in the MD simulation. Herein, the Al−Ga−N Stillinger−Weber (SW) potential, which has been successfully applied in previous studies, 17,18 was used to describe the atomic interactions in the AlN and GaN systems.…”