Effect of the Ag deposition rate on the properties of conductive transparent MoO3/Ag/MoO3 multilayers

Cattin, Linda; Lare, Yendoubé; Makha, Mohamed; Fleury, Maurice‐Bernard; Chandezon, F.; Abachi, T.; Morsli, M.; Napo, Kossi; Addou, M.; Bérnède, J.C.

doi:10.1016/j.solmat.2013.05.026

Cited by 48 publications

(19 citation statements)

References 43 publications

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“…It can be seen from the SEM images that 0.5 Å/second rate resulted in discontinuous Ag islands while at higher deposition rates, more continuous thin films are formed. Improvement in Ag continuity with higher deposition rates is in agreement with previous studies . This behavior can be explained as follows: At lower deposition rates, deposited Ag atoms find sufficient time to reorganize and diffuse, so that a discontinuous thin film forms.…”

Section: Resultssupporting

confidence: 91%

“…Improvement in Ag continuity with higher deposition rates is in agreement with previous studies. 37 This behavior can be explained as follows: At lower deposition rates, deposited Ag atoms find sufficient time to reorganize and diffuse, so that a discontinuous thin film forms. Complimentarily, at higher rates, formation of high density of nucleation centers in a short time results in continuous film formation.…”

Section: Optimization Of Ag Deposition Ratementioning

confidence: 99%

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MoO _x /Ag/MoO _x multilayers as hole transport transparent conductive electrodes for n‐type crystalline silicon solar cells

et al. 2020

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Summary Substitution of highly doped layers with conventional transparent conductive electrodes as carrier collecting and selective contacts in conventional crystalline silicon (c‐Si) solar cell configurations is crucial in increasing affordability of solar cells by lowering material costs. In this study, oxide/metal/oxide (OMO) multilayers featuring molybdenum oxide (MoOx) and silver (Ag) thin films are developed by thermal evaporation technique, as dopant‐free hole transport transparent conductive electrodes (HTTCEs) for n‐type c‐Si solar cells. Semidopant‐free asymmetric heterocontact (semi‐DASH) solar cells on n‐type c‐Si utilizing OMO multilayers are fabricated. The effect of outer MoOx layer thickness and Ag deposition rate on the photovoltaic characteristics of the fabricated semi‐DASH solar cells are investigated. A comparison of front side pyramid textured and flat surface solar cells is performed to optimize the optical and electrical properties. Highest efficiency of 9.3% ± 0.2% is achieved in a pyramid textured semi‐DASH c‐Si solar cell with 15/10/30 nm of HTTCE structure.

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Section: Resultssupporting

confidence: 91%

Section: Optimization Of Ag Deposition Ratementioning

confidence: 99%

MoO _x /Ag/MoO _x multilayers as hole transport transparent conductive electrodes for n‐type crystalline silicon solar cells

et al. 2020

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“…In general, the conductivity of ultra‐thin Ag decreases dramatically if its thickness is below the percolation threshold (∼10 nm) due to the formation of inhomogeneous islands. However, this problem can be alleviated by using a proper seeding layer to improve the compatibility with ultra‐thin Ag …”

Section: Summarized Device Performance Of the Studied Solar Cellsmentioning

confidence: 99%

Microcavity‐Enhanced Light‐Trapping for Highly Efficient Organic Parallel Tandem Solar Cells

Zuo

Chueh

et al. 2014

Advanced Materials

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A high-performance parallel tandem solar cell employing ultra-thin Ag as the intermediate anode is demonstrated, which comprises a semitransparent front sub-cell and a microcavity assisted back sub-cell. In addition to the extended optical field as a result of the tandem architecture, the prominent microcavity resonance formed in the back sub-cell enables such a parallel tandem configuration to possess high light utilization efficiency (the peak EQE value is over 80%) and a high photovoltaic performance of 9.2%. This study establishes an effective architecture that can be generally applicable to all organic materials for improving their performance.

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“…To address the issues mentioned above, a wetting layer is usually placed underneath the Ag fi lm to promote the formation of continuous fi lms below or around 10 nm. Thus far, various wetting layers have been demonstrated by either dielectric materials (MoO x , [ 22,24,[31][32][33] ZnO, [ 34 ] WO 3 , [ 35 ] and TeO 2[ 36 ] ) or semiconductors/metals (Ge [ 30 ] and Au [ 37 ] ). Semiconductors and metals are lossy in the visible band, leading to the reduced transparency.…”

mentioning

confidence: 99%

High‐Performance Ta₂O₅/Al‐Doped Ag Electrode for Resonant Light Harvesting in Efficient Organic Solar Cells

Zhao

Zhang

Kim

et al. 2015

Advanced Energy Materials

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not conducting and can not collect charges unless an additional conductive layer is added. [ 18 ] Compared with nanostructures, planar thin Ag fi lms can be easily prepared without defects over a large area and potentially applied to semitransparent windows and tandem architectures. [ 29 ] Moreover, to further boost the device efficiency, a resonant optical cavity can be created between the transparent thin Ag fi lm and an opaque back contact metal electrode, thus trapping light inside the active layer and enhancing its light absorption. [ 22 ] However, Ag follows 3D growth mode: during deposition, Ag atoms fi rst agglomerate into isolated islands, and as the deposition continues, these islands fi nally connect to each other and form a continuous fi lm. [ 30 ] On one hand, a certain threshold of thickness (usually beyond 10 nm) is required to get a continuous and conductive Ag fi lm. Though the conductivity is satisfi ed by a thicker fi lm, the transparency is inevitably compromised. On the other hand, the roughness of a continuous Ag fi lm is large (e.g., root-mean-square (RMS) roughness of 6 nm for 15 nm Ag fi lm), [ 30 ] resulting in additional light scattering loss. Moreover, since most OSCs are only few hundred nm thick, a rough surface could easily result in electrical shorts between electrodes, especially for large-area devices. To address the issues mentioned above, a wetting layer is usually placed underneath the Ag fi lm to promote the formation of continuous fi lms below or around 10 nm. Thus far, various wetting layers have been demonstrated by either dielectric materials (MoO x , [ 22,24,[31][32][33] ZnO, [ 34 ] WO 3 , [ 35 ] and TeO 2[ 36 ] ) or semiconductors/metals (Ge [ 30 ] and Au [ 37 ] ). Semiconductors and metals are lossy in the visible band, leading to the reduced transparency. Besides the use of wetting layers, thin and smooth Ag fi lms have also been achieved by treating the substrate with a layer of molecules to promote the Ag nucleation [ 38 ] or cooling down the substrate temperature during the Ag deposition. [ 22 ] However, it is highly desirable to have an alternative, simpler, and more scalable method to fabricate thin and smooth Ag fi lms in a single step and without special treatment of the substrate or special control of the deposition condition.We recently reported an ultrathin and smooth Ag fi lm without any wetting layer, achieved by doping small amount of Al into Ag during the fi lm deposition. [ 39 ] In this work, we will demonstrate a conductive and transparent Ag based fi lm as thin as 4 nm by adding a wetting layer (Ta 2 O 5 ) underneath the Al-doped Ag. OSCs built on such thin fi lms produce a PCE over 7%. In addition, the Ta

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Effect of the Ag deposition rate on the properties of conductive transparent MoO3/Ag/MoO3 multilayers

Cited by 48 publications

References 43 publications

MoO _x /Ag/MoO _x multilayers as hole transport transparent conductive electrodes for n‐type crystalline silicon solar cells

MoO _x /Ag/MoO _x multilayers as hole transport transparent conductive electrodes for n‐type crystalline silicon solar cells

Microcavity‐Enhanced Light‐Trapping for Highly Efficient Organic Parallel Tandem Solar Cells

High‐Performance Ta₂O₅/Al‐Doped Ag Electrode for Resonant Light Harvesting in Efficient Organic Solar Cells

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Effect of the Ag deposition rate on the properties of conductive transparent MoO3/Ag/MoO3 multilayers

Cited by 48 publications

References 43 publications

MoO x /Ag/MoO x multilayers as hole transport transparent conductive electrodes for n‐type crystalline silicon solar cells

MoO x /Ag/MoO x multilayers as hole transport transparent conductive electrodes for n‐type crystalline silicon solar cells

Microcavity‐Enhanced Light‐Trapping for Highly Efficient Organic Parallel Tandem Solar Cells

High‐Performance Ta2O5/Al‐Doped Ag Electrode for Resonant Light Harvesting in Efficient Organic Solar Cells

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Product

Resources

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MoO _x /Ag/MoO _x multilayers as hole transport transparent conductive electrodes for n‐type crystalline silicon solar cells

MoO _x /Ag/MoO _x multilayers as hole transport transparent conductive electrodes for n‐type crystalline silicon solar cells

High‐Performance Ta₂O₅/Al‐Doped Ag Electrode for Resonant Light Harvesting in Efficient Organic Solar Cells