Effect of the C-bridge length on the ultraviolet-resistance of oxycarbosilane low-k films

Redzheb, M.; Prager, Lutz; Naumov, Sergej; Krishtab, Mikhail; Armini, Silvia; Voort, Pascal Van Der; Baklanov, Mikhaı̈l R.

doi:10.1063/1.4939449

Cited by 13 publications

(13 citation statements)

References 45 publications

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“…It is necessary to note that the results of plasma treatment are highly sensitive to the pristine films structures. As it was pointed in 210,211 the films with backbone carbon (Si-R-Si) demonstrate the enhanced resistance to carbon loss upon exposure to either atomic oxygen or VUV radiation in the presence of O2 (VUV+O2). Also, Yasuhara et al 150 Besides, a shorter plasma exposure time can reduce the damage 102,147,192,212 .…”

Section: Iii2 Vuv/uv Radiation In Low-k Plasma Processingmentioning

confidence: 81%

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Baklanov

Jousseaume

Рахимова

et al. 2019

Applied Physics Reviews

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This paper presents an in-depth overview of the application and impact of UV/VUV light in advanced interconnect technology. UV light application in BEOL historically was mainly motivated by the need to remove organic porogen and generate porosity in organosilicate (OSG) low-k films. Porosity lowered the film's dielectric constant, k, which enables one to reduce the interconnect wiring capacitance contribution to the RC signal delay in integrated circuits. The UV-based low-k film curing (λ > 200 nm) proved superior to thermal annealing and electron beam curing. UV and VUV light also play a significant role in plasma-induced damage to pSiCOH. VUV light with λ < 190–200 nm is able to break Si-CH3 bonds and to make low-k materials hydrophilic. The following moisture adsorption degrades the low-k properties and reliability. This fact motivated research into the mechanisms of UV/VUV photon interactions in pSiCOH films and in other materials used in BEOL nanofabrication. Today, the mechanisms of UV/VUV photon interactions with pSiCOH and other films used in interconnect fabrication are fairly well understood after nearly two decades of research. This understanding has allowed engineers to both control the damaging effects of photons and utilize the UV light for material engineering and nanofabrication processes. Some UV-based technological solutions, such as low-k curing and UV-induced stress engineering, have already been widely adopted for high volume manufacturing. Nevertheless, the challenges in nanoscaling technology may promote more widespread adoption of photon-assisted processing. We hope that fundamental insights and prospected applications described in this article will help the reader to find the optimal way in this wide and rapidly developing technology area.

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Section: Iii2 Vuv/uv Radiation In Low-k Plasma Processingmentioning

confidence: 81%

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Baklanov

Jousseaume

Рахимова

et al. 2019

Applied Physics Reviews

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“…The characteristic band of Sample 45E is located at ~720 cm −1 , which is correlated to the C–C bonds of ethylene bridges [ 26 , 27 , 28 ]. The distinctive peak of C–H bonds of methylene bridges in Sample 45M is located at ~1360 cm −1 [ 29 ], whose position differs markedly from the peak of C–H bonds of ethylene bridges in Sample 45E (~1415 cm −1 ) [ 30 ]. Some differences are also visible in the 3100–2800 cm −1 region.…”

Section: Resultsmentioning

confidence: 99%

“…Moreover, we recently found that 1,4-phenylene rings can be more sensitive to thermal destruction in the presence of UV light even with λ > 200 nm [ 24 ]. It was shown that this effect is related to a shift of absorption edge in the UV region of 1,4-phenylene-bridged OSG to higher λ in comparison with ethylene/methylene-bridged [ 30 ] and methyl-terminated materials. It has also been shown that all these bridges are sensitive to the curing environment.…”

Section: Resultsmentioning

confidence: 99%

Effects of Methyl Terminal and Carbon Bridging Groups Ratio on Critical Properties of Porous Organosilicate Glass Films

et al. 2020

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Organosilicate glass-based porous low dielectic constant films with different ratios of terminal methyl to bridging organic (methylene, ethylene and 1,4-phenylene) groups are spin-on deposited by using a mixture of alkylenesiloxane with organic bridges and methyltrimethoxysilane, followed by soft baking at 120–200 °C and curing at 430 °C. The films’ porosity was controlled by using sacrificial template Brij® L4. Changes of the films’ refractive indices, mechanical properties, k-values, porosity and pore structure versus chemical composition of the film’s matrix are evaluated and compared with methyl-terminated low-k materials. The chemical resistance of the films to annealing in oxygen-containing atmosphere is evaluated by using density functional theory (DFT). It is found that the introduction of bridging groups changes their porosity and pore structure, increases Young’s modulus, but the improvement of mechanical properties happens simultaneously with the increase in the refractive index and k-value. The 1,4-phenylene bridging groups have the strongest impact on the films’ properties. Mechanisms of oxidative degradation of carbon bridges are studied and it is shown that 1,4-phenylene-bridged films have the highest stability. Methylene- and ethylene-bridged films are less stable but methylene-bridged films show slightly higher stability than ethylene-bridged films.

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“…The chemical structure of the films following the template removal at 400 °C was investigated by transmission FTIR measurements. Figure shows the characteristic absorptions of the ethylene‐bridged PMO in the ranges 500–1500 and 2700–4000 cm −1 providing evidence for the presence of intact Si−CH 2 −CH 2 −Si groups. The absorptions centred at 1273 and 1417 cm −1 are attributed to C−H deformation in the bridging ethylene groups.…”

Section: Figurementioning

confidence: 99%

Tuning the Properties of Periodic Mesoporous Organosilica Films for Low‐k Application by Gemini Surfactants

Redzheb¹,

Okudur

Bernstorff

et al. 2018

ChemPhysChem

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Periodic mesoporous organosilica (PMO) thin films were synthesized by evaporation-induced self-assembly of 1,2-bis(triethoxysilyl)ethane and an ionic Gemini 16-12-16 surfactant under acidic conditions. The films were characterized by Fourier-transform infrared spectroscopy, grazing-incidence small-angle X-ray scattering, ellipsometric porosimetry, impedance measurements, and nanoindentation. The ease of control of the packing parameter in Gemini surfactants makes the PMO film templated by a Gemini an exciting first step towards small pore size PMO films with engineered mesostructures.

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Effect of the C-bridge length on the ultraviolet-resistance of oxycarbosilane low-k films

Abstract: The effect of water uptake on the mechanical properties of low-k organosilicate glass J. Appl. Phys. 114, 084103 (2013) Depth dependence of ultraviolet curing of organosilicate low-k thin films

Cited by 13 publications

References 45 publications

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Effects of Methyl Terminal and Carbon Bridging Groups Ratio on Critical Properties of Porous Organosilicate Glass Films

Tuning the Properties of Periodic Mesoporous Organosilica Films for Low‐k Application by Gemini Surfactants

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