The results of irradiating at 400-800°C silicon carbide, having the β-SiC cubic modification, in different channels of the BOR-60 reactor, where the radiation composition factor was varied over the range 2.3-6.5, are discussed. The expansion of the crystal lattice of β-SiC in the saturation stage is taken as the measure of damage. Data on isochronous annealing are used to investigate the energy spectrum for activation of annealing of defects -the smearing at high and low energy under the influence of γ radiation. The results are compared with data from similar irradiation of silicon carbide in MR and BR-10 and with data on the influence of γ radiation on other materials and their properties.Radiation γ annealing, which introduces substantial corrections in the understanding of radiation damage to materials and was first observed for diamonds [1], has been found to be significant also for important materials such as reactor graphite [2] and vessel steel [3]. The γ rays which give rise to this phenomena act on matter, primarily, because of Compton electrons, which interact with the atoms of the irradiated material and not directly with the material itself.The defects produced by neutron irradiation are bound with the crystal lattice more weakly than with the regular lattice atoms. For example, to produce a Frenkel pair, i.e., remove an atom from a lattice site and form an interstice and a vacancy for a regular atom, tens of electron volts must be transferred, and the migration activation energy for vacancies and interstices is several electron volts or even tenths of an electron volt. Consequently, the electrons which appear as a result of γ radiation are ordinarily ineffective in producing new defects, but actively interact with defects which have already been produced. It is believed that one possible mechanism of radiation γ annealing is that under the influence of γ radiation the spectrum of the activation energy for annealing of defects which have already been produced by neutrons is transformed, becoming diffuse at high and low energies. In the process, the defects with the lowest activation energy are annealed at the irradiation temperature (this is the radiation γ annealing effect), and the more stable defects remain up to a higher annealing temperature.In studying radiation γ annealing, it is convenient to introduce the concept of the radiation composition factor, which is the ratio of the neutron and γ-ray flux densities at 0.2 MeV and characterizes the combined action of these radiations on the material. For example, for a low value of the factor when the γ-ray flux is relatively high, the action of the flux becomes more intense and the radiation γ-annealing efficiency increases.Irradiation and Annealing of Silicon Carbide. In the present work, the results of irradiation of silicon carbidehaving the cubic modification β-SiC, in a reactor are analyzed from the standpoint of the radiation composition factor. This material was prepared artificially at the A. A. Baikov Institute of Metallurgy by condensation...