The fabrication of
CH3NH3PbI3 perovskite
by solution processes is known to induce impurities in the film, which
is usually correlated to the low photovoltage or fill factor of the
solar cells. The nature of such defects is not always easy to identify
and is described in general as grain boundaries containing dangling
bonds, vacancies, interstitials, or impurities. In this work, perovskite
films were fabricated with a very large and known concentration of
impurities (PbI2, Pb
x
(O/OH)
y
) and further characterized using chronoamperometry
and impedance spectroscopy. The IS data was carefully analyzed and
compared with existing literature and a new interpretation is proposed
according to the results. The IS features at high frequency and close
to open circuit were attributed to the photogenerated charge recombination.
Despite large impurity levels (>30 mol %), minor differences were
observed in regard to charge recombination, which minimally affected
the photovoltage.