Effect of the density of collision cascades on ion implantation damage in ZnO

Azarov, Alexander; Kucheyev, S. O.; Titov, A.I.; Karaseov, P. A.

doi:10.1063/1.2801404

Cited by 38 publications

(17 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Previous experiments for different materials have revealed that the efficiency of the formation of stable damage generally increases with increasing m 6891013161718193132. However, even the qualitative behavior is non-trivial and depends strongly on the material and irradiation conditions such as Φ, F , and T .…”

Section: Resultsmentioning

confidence: 98%

Effects of collision cascade density on radiation defect dynamics in 3C-SiC

Aji

Wallace

Kucheyev

2017

Sci Rep

Self Cite

View full text Add to dashboard Cite

Effects of the collision cascade density on radiation damage in SiC remain poorly understood. Here, we study damage buildup and defect interaction dynamics in 3C-SiC bombarded at 100 °C with either continuous or pulsed beams of 500 keV Ne, Ar, Kr, or Xe ions. We find that bombardment with heavier ions, which create denser collision cascades, results in a decrease in the dynamic annealing efficiency and an increase in both the amorphization cross-section constant and the time constant of dynamic annealing. The cascade density behavior of these parameters is non-linear and appears to be uncorrelated. These results demonstrate clearly (and quantitatively) an important role of the collision cascade density in dynamic radiation defect processes in 3C-SiC.

show abstract

Section: Resultsmentioning

confidence: 98%

Effects of collision cascade density on radiation defect dynamics in 3C-SiC

Aji

Wallace

Kucheyev

2017

Sci Rep

Self Cite

View full text Add to dashboard Cite

show abstract

“…Perillat‐Merceroz et al observed two types of dislocation loops in N‐bombarded ZnO: one type oriented along basal planes and localized approximately within N ions range (basal loops) and a second one oriented along prismatic planes, localized in deeper regions (prismatic loops) . Azarov et al showed that damage buildup in ZnO does not depend on the density of collision cascades induced by bombarding ions. Based on these conclusions and supported by RBS/C and XRD measurements of 300 keV Ar‐bombarded ZnO, Turos et al proposed a model of formation of both basal and prismatic loops, which is independent of the bombarding ion mass and mediated by lattice stress.…”

Section: Discussionmentioning

confidence: 99%

“…ZnO is transparent to visible light, cheap in production, and significantly resistant to ion bombardment. It has been observed not to be driven amorphous by different ion beams up to 100 displacements per atom (DPA) …”

Section: Introductionmentioning

confidence: 99%

RBS/C, XRR, and XRD Studies of Damage Buildup in Er‐Implanted ZnO

Jozwik

Magalhães

Ratajczak

et al. 2018

Physica Status Solidi (b)

View full text Add to dashboard Cite

Accumulation and transformation of defects formed in bulk ZnO crystals at room temperature upon 300 keV Er ions bombardment have been thoroughly examined using complementary techniques: Rutherford Backscattering Spectrometry in ion Channeling mode (RBS/C), X‐Ray Reflectivity (XRR), and X‐Ray Diffraction (XRD). Evaluation of RBS/C spectra has been performed using Monte Carlo (MC) simulations (McChasy software). Two defect types have been indicated: point defects (randomly displaced atoms, RDA) and extended ones (edge dislocations, DIS). Depth‐distributions of RDA and DIS turned out to be shifted toward deeper regions of ZnO crystals (relative to Er‐ions range) while DIS are localized even deeper than RDA. The MC simulations reveal three regions of defects accumulation separated by two regions of rapid defects transformation occurring at a certain critical Er fluence. Strain, suggested to be a driving force of defect transformation, has been determined using simulations of the XRD profiles based on the dynamical theory of X‐ray diffraction (MROX software). The presented research can help to better understand the interaction between impurity Er ions and ZnO target atoms during the implantation process. Hence, implantation conditions, for example, for luminescence purpose may now be more efficiently chosen based on the results discussed.

show abstract

“…12 Furthermore, the "bulk" disorder saturates with increasing ion dose, and the damage accumulation exhibits an anomalous multipeak distribution when high-density collision cascades are generated. 12,13 In addition, annealing of the damage is often complicated by a surface degradation, caused by oxygen loss and change in material composition at high temperature ( 1000 • C). 14,15 In fact, changes in the surface morphology have been observed already after low-temperature anneals (>200 • C in nitrogen ambient environment and >300 • C in air), featured with an increased surface roughness.…”

Section: Introductionmentioning

confidence: 99%

Thermally induced surface instability in ion-implanted MgxZn1−xO films

Azarov

Hallén²,

et al. 2011

Phys. Rev. B

Self Cite

View full text Add to dashboard Cite

Thermal stability of originally single crystalline wurtzite Mg x Zn 1−x O (x 0.3) films implanted at room temperature with 166 Er ions is studied by a combination of Rutherford backscattering spectrometry, time-of-flight elastic recoil detection analysis, x-ray diffraction analysis, and atomic force microscopy. The MgZnO films exhibit a complex behavior during postimplantation annealing associated with compositional changes and surface erosion in addition to Er accumulation at the surface. The importance of these processes depends on the Mg content, annealing temperature, and amount of implantation damage. Specifically, increases in the Mg content as well as the implantation damage enhance the compositional changes in the near-surface region and give rise to altered stoichiometry and Mg-enriched phase separation. In its turn, the rate of surface erosion in MgZnO under the thermal treatment depends on temperature, MgZnO composition, and the amount of implantation damage nontrivially, which is attributed to the compositional changes in the near-surface region assisted by the implantation damage.

show abstract

Effect of the density of collision cascades on ion implantation damage in ZnO

Cited by 38 publications

References 14 publications

Effects of collision cascade density on radiation defect dynamics in 3C-SiC

Effects of collision cascade density on radiation defect dynamics in 3C-SiC

RBS/C, XRR, and XRD Studies of Damage Buildup in Er‐Implanted ZnO

Thermally induced surface instability in ion-implanted MgxZn1−xO films

Contact Info

Product

Resources

About