Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices

Trojman, Lionel; Ragnarsson, Lars‐Åke; Pantisano, L.; Lujan, G.; Houssa, Michel; Schram, T.; Cubaynes, F.N.; Schaekers, Marc; Ammel, A. Van; Groeseneken, G.; Gendt, Stefan De; Heyns, Marc

doi:10.1016/j.mee.2005.04.107

Cited by 9 publications

(3 citation statements)

References 4 publications

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“…4(b) suggests that the MISFET channel mobility, incorporating the HfSiO x gate dielectrics grown using the VALID method, is comparable to those of the hafnium oxide gate dielectrics, grown using typical CVD methods with TaN gate electrodes. 10) In summary, this study has demonstrated that HfSiO x films can be deposited by taking advantage of the multilayer adsorption of TEOS/HTB and the hydrolysis of all layers in liquid water. This process improved the thickness distribution on 4-in.…”

mentioning

confidence: 78%

Growth of HfSiO_x films by Vapor–Liquid Hybrid Deposition Utilizing Si(OC₂H₅)₄/Hf(^tOC₄H₉)₄ Multilayer Adsorption

Hojo

Xuan

Yasuda³

2005

Jpn. J. Appl. Phys.

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In this study, a HfSiO x deposition technique is described that takes advantage of the multilayer adsorption of Si(OC2H5)4 (TEOS) and Hf( t OC4H9)4 (HTB), followed by the hydrolysis of all of the layers in liquid water. A thickness distribution better than ±3% and a uniform Si:Hf ratio over the 4-in. wafer were achieved using this deposition technique. The n-type metal–insulator–semiconductor field-effect transistor (MISFET) incorporating the HfSiO x film exhibited well-behaved capacitance–voltage characteristics. The channel mobility of 81% compared well to the universal curve at an effective field of 0.8 MV cm-1.

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mentioning

confidence: 78%

Growth of HfSiO_x films by Vapor–Liquid Hybrid Deposition Utilizing Si(OC₂H₅)₄/Hf(^tOC₄H₉)₄ Multilayer Adsorption

Hojo

Xuan

Yasuda³

2005

Jpn. J. Appl. Phys.

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“…En la Figura 2 se muestra la movilidad de un dispositivo high-κ con capa de SiON de 2-1.5 nm con menos de una mono-capa de HfO 2 (5 ciclos con ALD) [26]. De esta manera podemos considerar que las colisiones producidas por "Remote Phonons Scattering (RPS)" [27] son muy débiles en comparación de las colisiones producidad por "Remote Coulomb Scattering (RCS)" o interacciónes con defectos eléctricos producidos por la capa de high-κ.…”

Section: Evidencia De Las Interacciónes Coulómbicasunclassified

EOT sub-nanométrico y degradación de la movilidad: ¿hacia un límite físico con las técnicas de fabricación modernas?

Trojman

Pantisano²,

Bustamante

et al. 2010

Av. Cienc. Ing. (Quito)

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In this article we investigate the major problem of the micro/nano-electronic: How to reduce the Equivalent Oxide Thickness (EOT) in the sub-nanometric range and improving the MOSFET performance? To reduce the EOT it is necessary that the semiconductor industry introduce the high-κ material as the Hafnium (Hf) in the dielectric layer. However the Hf produces a reduction of the mobility and therefore a reduction of the MOSFET speed. We explain through a simple semi-empirical model this mobility degradation in order to familiarize the reader with the concept of mobility for the high-κ MOSFET. Afterward we focus on two optimized processing methods for the EOT reduction yielding the best gate stack quality. These processing methods are the Fully-Silicide (FuSi) gate with HfSiON dielectric and the Metal Gate with HfO2 which are both "gate first" based integration scheme. The important results we found is that first we can obtain a sub-1nm EOT in the both cases although it was thought impossible to make it with high thermal budget process such as the FuSi method. Second, the mobility degradation is very similar in the both case in spite of the very different chemistries we use to form the gate stack. We conclude that the modern deposition technique does not allow controlling the dielectric quality as of 0.8 nm and we suggest using the "gate last" based integration scheme to improve further the gate stack quality.Keywords. Microelectronics, MOSFET, high-κ, sub-1nm EOT, mobility, Coulombic interaction. ResumenEn este artículo investigamos un problema mayor de la microelectrónica moderna. Para reducir el EOT y aumentar el desempeño del MOSFET, la industria tiene que introducir el material high-κ, como el Hf. Pero eso genera una degradación de la movilidad y una pérdida de la rapidez de los dispositivos. Explicamos esta degradación con un modelo muy sencillo para familiarizar al lector con el concepto de movilidad. Después nos enfocamos en dos procesamientos optimizados (Fully-Silicid con HfSiON y Metal Gate con HfO2) para reducir el EOT y causar un mínimo de defectos en el film. Un resultado muy importante es que podemos lograr un EOT sub-nanométrico en los dos casos ya que esto fue considerado imposible con el FuSi/HfSiON. Otro resultado importante es que en los dos casos la degradación de la movilidad es muy parecida a pesar de que los dos procesamientos generan una pila de compuerta de naturaleza química muy diferente. Concluimos que con las técnicas de deposición moderna no se controla la calidad del dieléctrico a partir de 0.8 nm y sugerimos cambiar el esquema de integración con un "gate last". Palabras Clave. Microelectrónica, MOSFET, high-κ, EOT sub-nanométrico, movilidad, interacciones Coulómbicas. IntroducciónHace más de 50 años que los dispositivos del estado só-lido han revolucionado las sociedades humanas en casi cualquier aspecto de la vida cotidiana. La computadora y el teléfono celular son simplemente dos ejemplos de su impacto. En medio de todos los dispositivos, el MOSFET [1] es el dispositivo qu...

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“…The water molecules absorbed in the dielectric during its growth is a very rich source of oxygen. During the different temperature annealing treatments, the gate gets oxidized by the water released from the dielectric (16). To study the influence of this oxidation onto the gate work function, three models have been considered (Figure 2).…”

Section: Interfacial Oxidationmentioning

confidence: 99%

Workfunction (WF) Simulations of Ta/HfO2, Ta2C/HfO2 and Ta2C/La2O3/HfO2 Capped High-k Stacks

Heyden¹,

Pourtois²,

Gendt³

et al. 2007

ECS Trans.

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The electronic properties of tantalum based metal gates in contact with HfO2 are investigated through first-principles calculations. The (110) Ta surface has a p-type work function and is most likely to be formed at the interface with the dielectric. The influence of the transistor processing conditions is modeled by incorporating oxygen atoms in between the metal and the dielectric. Oxidizing the metal gate leads to an increase of the metal work function. To acquire either pMOS or nMOS work function values, the effective work function of the Ta (110)/HfO2 stack can be tuned by incorporating carbon or by inserting dielectric capping layers. The alloy of tantalum with carbon atoms reduces the metal work function which is also reported experimentally. Sandwiching a La2O3 capping layer between the gate and the dielectric leads to a work function reduction. These work function shifts are interpreted on the basis of the electronic density distribution at the interfacial region.

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Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices

Cited by 9 publications

References 4 publications

Growth of HfSiO_x films by Vapor–Liquid Hybrid Deposition Utilizing Si(OC₂H₅)₄/Hf(^tOC₄H₉)₄ Multilayer Adsorption

Growth of HfSiO_x films by Vapor–Liquid Hybrid Deposition Utilizing Si(OC₂H₅)₄/Hf(^tOC₄H₉)₄ Multilayer Adsorption

EOT sub-nanométrico y degradación de la movilidad: ¿hacia un límite físico con las técnicas de fabricación modernas?

Workfunction (WF) Simulations of Ta/HfO2, Ta2C/HfO2 and Ta2C/La2O3/HfO2 Capped High-k Stacks

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Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices

Cited by 9 publications

References 4 publications

Growth of HfSiOx films by Vapor–Liquid Hybrid Deposition Utilizing Si(OC2H5)4/Hf(tOC4H9)4 Multilayer Adsorption

Growth of HfSiOx films by Vapor–Liquid Hybrid Deposition Utilizing Si(OC2H5)4/Hf(tOC4H9)4 Multilayer Adsorption

EOT sub-nanométrico y degradación de la movilidad: ¿hacia un límite físico con las técnicas de fabricación modernas?

Workfunction (WF) Simulations of Ta/HfO2, Ta2C/HfO2 and Ta2C/La2O3/HfO2 Capped High-k Stacks

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Growth of HfSiO_x films by Vapor–Liquid Hybrid Deposition Utilizing Si(OC₂H₅)₄/Hf(^tOC₄H₉)₄ Multilayer Adsorption

Growth of HfSiO_x films by Vapor–Liquid Hybrid Deposition Utilizing Si(OC₂H₅)₄/Hf(^tOC₄H₉)₄ Multilayer Adsorption