Effect of the electronic subsystem excitation on the ionisation probability of atoms sputtered from metals by atomic and molecular projectiles

Belykh, S. F.; Wojciechowski, I.A.; Palitsin, Vladimir; Zinoviev, A. V.; Adriaens, Annemie; Adams, F.

doi:10.1016/s0039-6028(01)01111-6

Cited by 16 publications

(4 citation statements)

References 37 publications

(29 reference statements)

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“…The sputtering process, especially emission process of secondary ions, has been widely studied for various target materials under bombardment of heavy ions. Most of studies are, however, concerned with secondary ion mass spectrometry (SIMS) at nuclear-collision dominant low energies [3][4][5][6][7][8][9]. In a MeV-energy range, an electronic-energy-loss process becomes dominant, [10] and the basic process of secondary ion emission is different from that in the low energy range because the electronic behavior strongly depends on the solid state property.…”

Section: Introductionmentioning

confidence: 99%

Energy dependent sputtering of nanoclusters from a nanodisperse target

Satpati

Ghatak

Joseph

et al. 2006

Nuclear Instruments and Methods in Physics Research Section B:

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Section: Introductionmentioning

confidence: 99%

Energy dependent sputtering of nanoclusters from a nanodisperse target

Satpati

Ghatak

Joseph

et al. 2006

Nuclear Instruments and Methods in Physics Research Section B:

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“…This postulated feature of the molecular ion bombardment was confirmed experimentally. Indeed, in [29] an analysis of kinetic energy distributions of Nb ϩ and Ta …”

Section: Introductionmentioning

confidence: 99%

Nonadditive sputtering of silicon by keV energy molecular projectiles of heavy and light elements

Belykh

Kovarsky²,

Palitsin

et al. 2001

International Journal of Mass Spectrometry

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In the present work a positive secondary ion emission from a silicon produced by Au m Ϫ projectiles (m ϭ 1-3) with energies of E 0 ϭ 9 and 18 keV and by Al m Ϫ projectiles (m ϭ 1,2) with energies of E 0 ϭ 6, 9, 12, and 18 keV have been studied. Anomalous high nonadditivity of sputtering as large cluster Si n ϩ ions (n Ͼ 4) under molecular Au m Ϫ ion bombardment has been found. As compared with heavy (Au m Ϫ ) projectiles, the light (Al m Ϫ ) projectiles are not effective for sputtering of large cluster ions. For molecular Al m Ϫ ion bombardment nonadditivity of sputtering of small cluster Si n ϩ ions (n Յ 4) increases with decreasing of the energy E 0 from 9 to 6 keV/atom. This effect shows that the efficiency of nonadditive sputtering strongly depends on the penetration depth of molecular projectile and, hence, on the energy density deposited by molecular projectile into subsurface layers of the target from which the cluster ion emission occurs. (Int J Mass Spectrom 209 (2001) 141-152)

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“…In the model, the ionization probability at the excited surface region increases effectively, because holes produced by the electronic excitation act as acceptors of electrons in the emitted atoms. This model successfully explains several cases of the low-energy ion-induced sputtering of metals [20,21]. The electronic excitation is characterized by T eff , which correlates probably with the electronic stopping power S e .…”

Section: B Singly Charged Secondary Atomic Ionsmentioning

confidence: 72%

Secondary-ion emission from III-V semiconductive materials under MeV-energy heavy-ion bombardment

et al. 2004

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Secondary-ion emission from III-V semiconductive chemical compounds (InP, InAs, and InSb) has been experimentally studied at heavy-ion energies from 0.5 to 5.0 MeV, where electronic collision is a dominant process. Various secondary ions such as large cluster ions and atomic ions were observed. Yields of In atomic and cluster ions depend scantly on the incident energy, and those of group-V atomic ions and of cluster ions containing group-V elements can be expressed by an exponential function of S e −1 , where S e is the electronic stopping power. This fact shows that the ionization probabilities of the atoms and the clusters whose ionization potentials are higher than the work functions of target materials are increased by transient electronic excitation induced by ion bombardment. The energy distributions of the atomic ions show that the singly charged atomic ions are emitted through the linear collision cascade process even at MeV incident energies, and the multiply charged ions are produced by a projectile-induced simultaneous process of ionization and recoiling of atoms on the target surface. The yield dependences of the cluster ions on the electronic stopping power and on the cluster size are so much different from those for SiO 2. This fact precludes the multiple-bond-breaking process applied to the insulating material. Structural instabilities caused by high-density electronic excitations, which are known to take place in GaAs irradiated by slow multiply charged ions or lasers, are a possible cause of the cluster-ion emission from the semiconductive compounds at the MeV energy range.

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Effect of the electronic subsystem excitation on the ionisation probability of atoms sputtered from metals by atomic and molecular projectiles

Cited by 16 publications

References 37 publications

Energy dependent sputtering of nanoclusters from a nanodisperse target

Energy dependent sputtering of nanoclusters from a nanodisperse target

Nonadditive sputtering of silicon by keV energy molecular projectiles of heavy and light elements

Secondary-ion emission from III-V semiconductive materials under MeV-energy heavy-ion bombardment

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