Effect of the H2O/TEOS ratio upon the preparation and nitridation of silica sol/gel films

Glaser, Priscilla; Pantano, Carlo G.

doi:10.1016/0022-3093(84)90400-9

Cited by 46 publications

(18 citation statements)

References 8 publications

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“…17,[19][20][21][22][23] This is due to the fact that an increasing H 2 O/ TEOS ratio enhances the hydrolysis and condensation rates in these systems. 17,23 It is also known that the microstructure of a bulk glass is different than that of a thin coating due to the faster drying process of the latter.…”

Section: Discussionmentioning

confidence: 99%

Structure of heat-treated sol-gel SiO₂ glasses containing silver

et al. 2001

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The crystallization of bulk amorphous SiO 2 samples, prepared by the sol-gel method, was obtained by heat treatments in air at temperatures as low as 500°C. This occurs when silver is added to the precursor solutions in an amount such that it forms aggregates embedded in the glass. Another requirement to observe the low-temperature glass crystallization is that the bulk samples must be prepared from precursor solutions with specific compositions. These compositions, have a high H 2 O/TEOS ratio, which produces an amorphous SiO 2 structure with some structural similarities to cristobalite, the phase in which the SiO 2 glass crystallizes.

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Section: Discussionmentioning

confidence: 99%

Structure of heat-treated sol-gel SiO₂ glasses containing silver

et al. 2001

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“…Ion implantation of nitrogen into silicon for the purpose of oxide growth inhibition has also been reported (4,5). More recently, some authors (6,7) have reported that SiO~:Ny layers can be formed by ammonia with initially porous sol-gel derived silicon dioxide. In this paper, we report the inhibition of rapid thermal and furnace oxide growth due to an ultra-thin nitride layer previously grown using rapid thermal nitridation.…”

mentioning

confidence: 96%

Selective Oxidation Using Ultrathin Nitrogen‐Rich Silicon Surface Layers Grown by Rapid Thermal Processing

Araújo

Huang

Gallegos

1989

J. Electrochem. Soc.

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A method for selective oxidation using ultrathin nitrogen-rich layers (<20A) grown by rapid thermal processing is presented. Oxidation inhibition in these layers is shown to be a function of the previous oxide layer thickness and the N2-SI reaction conditions during the rapid thermal nitridation cycle. The oxide growth inhibition property of these layers is tested for rapid thermal and furnace grown oxides. Since oxide growth inhibition appears to be a strong function of the initial oxide thickness, the rapid thermal nitridation process is more controllable than conventional furnace methods because of the shorter exposure time to oxygen contamination. Characterization of the nitridation reaction, the influence of the initial oxide thickness, and the localized inhibition phenomenon are presented with the aim of making this technique useful for novel VLSI structures.

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“…Excessive water will enhance the hydrolysis speed of TEOS, regardless of the catalyst of acid or alkali [12][13][14]. However, the excessive water can reduce the condensation rate due to the dilution effect.…”

Section: Methodsmentioning

confidence: 96%