Effect of the intrinsic layer thickness on the spectral performance of p-i-n structure 4H-SiC ultraviolet photodetector

Chen, Xiaping; Zhang, Wu; Zhu, Huili

doi:10.1109/rsete.2011.5965701

Cited by 2 publications

(1 citation statement)

References 8 publications

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“…On the other hand, avalanche-type devices, as implied by the name, operate in the avalanche region, where photocurrent gain is primarily generated through the avalanche effect, as seen in APDs. While these devices offer significant internal current gain, they demand strict requirements in terms of materials and device properties [87]. Illustrations of various photodetector configurations are depicted in Figure 2.…”

Section: Czt Detector Structurementioning

confidence: 99%

Research on the Technological Progress of CZT Array Detectors

Li,

Cheng,

Liu

et al. 2024

Sensors

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CdZnTe (CZT) is a new type of compound semiconductor that has emerged in recent years. Compared to other semiconductor materials, it possesses an ideal bandgap, high density, and high electron mobility, rendering it an excellent room-temperature composite semiconductor material for X-ray and γ-ray detectors. Due to the exceptional performance of CZT material, detectors manufactured using it exhibit high energy resolution, spatial resolution, and detection efficiency. They also have the advantage of operating at room temperature. CZT array detectors, furthermore, demonstrate outstanding spatial detection and three-dimensional imaging capabilities. Researchers worldwide have conducted extensive studies on this subject. This paper, building upon this foundation, provides a comprehensive analysis of CZT crystals and CZT array detectors and summarizes existing research to offer valuable insights for envisioning new detector methodologies.

show abstract

Section: Czt Detector Structurementioning

confidence: 99%

Research on the Technological Progress of CZT Array Detectors

Li,

Cheng,

Liu

et al. 2024

Sensors

View full text Add to dashboard Cite

show abstract

Research on the Technological Progress of CZT Array Detectors

Li,

Cheng,

Liu

et al. 2023

Preprint

View full text Add to dashboard Cite

CdZnTe (CZT) is a new type of compound semiconductor that has emerged in recent years. Compared to other semiconductor materials, it possesses an ideal bandgap, high density, and high electron mobility, rendering it an excellent room-temperature composite semiconductor material for X-ray and γ-ray detectors. Due to the exceptional performance of CZT material, detectors manufactured using it exhibit high energy resolution, spatial resolution, and detection efficiency. They also have the advantage of operating at room temperature. CZT array detectors, furthermore, demonstrate outstanding spatial detection and three-dimensional imaging capabilities. Researchers worldwide have conducted extensive studies on this subject. This paper, building upon this foundation, provides a comprehensive analysis of CZT crystals and CZT array detectors, summarizes existing research to offer valuable insights for envisioning new detector methodologies.

show abstract

Effect of the intrinsic layer thickness on the spectral performance of p-i-n structure 4H-SiC ultraviolet photodetector

Cited by 2 publications

References 8 publications

Research on the Technological Progress of CZT Array Detectors

Research on the Technological Progress of CZT Array Detectors

Research on the Technological Progress of CZT Array Detectors

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