Effect of the O 2 + -ion bombardment on the TiN composition and structure

Исаханов, З. А.; Umirzakov, B. E.; Рузибаева, М. К.; Donaev, S. B.

doi:10.1134/s1063784215020097

Cited by 10 publications

(5 citation statements)

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“…When implanting small doses (D  10 16 ioncm -2 ) of the alloying element, dilute ion-implanted alloys with an impurity element concentration of ~ 1 at. % are formed [10][11][12][13][14][15]. The depth of the maximum content of the alloying element in the surface layer of the crystal is mainly determined by the ion energy of the impurity element [17,18].…”

Section: Resultsmentioning

confidence: 99%

Distribution of Molybdenum Atoms over Depth of the Surface Layer of a Niobium Single Crystal Produced by Ion Bombardment

Ergashov¹,

Donaev²

2022

J. Nano- Electron. Phys.

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One of the fundamental directions in the use of ion implantation of metals is the creation of surface alloys of any composition. And their quantitative characteristic is the distribution of atoms of the impurity element in depth of the surface layer of the metal substrate [1][2][3][4][5]. In the study of the contribution of each component in changing the electronic structure, emission-adsorption and catalytic properties of multicomponent metal alloys, the creation of particularly pure metal solid solutions, as well as the determination of the actual concentration of alloying elements and their distribution in the surface layer of crystals are of great value. To study the distribution profiles of the concentration of ion-implanted atoms of refractory metals in alloys based on refractory metals, the method of layer-by-layer analysis using Auger electron spectroscopy in conjunction with an argon ion cannon is used. In this work, on the example of implantation of low-energy molybdenum ions into a single crystal of niobium facet (100), the features of creating surface alloys based on refractory metals with a low concentration of the alloying element and the distribution of the ion-implanted metal in the near-surface region of the crystal are studied [5][6][7][8][9].

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Section: Resultsmentioning

confidence: 99%

Distribution of Molybdenum Atoms over Depth of the Surface Layer of a Niobium Single Crystal Produced by Ion Bombardment

Ergashov¹,

Donaev²

2022

J. Nano- Electron. Phys.

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“…Note that we also observed the indicated surface superstructures after annealing of samples implanted with high-energy ions (E 0 = 2-5 keV). The only difference was that the formation of surface structures required a longer (the more, the higher the ion energy) annealing at the corresponding temperatures [13][14][15][16][17][18][19][20]. Depending on the type of the initial face of the silicon surface and the type of implanted ions of alkaline and alkaline-earth elements, the formation of various types of surface superstructures is observed.…”

Section: Resultsmentioning

confidence: 99%

Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

et al. 2021

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Using the methods of electron spectroscopy and slow electron diffraction, we studied the processes of the formation of nanosized metal silicide films in the near-surface region of Si (111) and Si (100) during low-energy implantation of Ba ions and alkaline elements. The optimal technological modes of ion implantation and subsequent annealing for the formation of thin nanoscale films of silicides were determined. The type of surface superstructures of thin silicide films has been established.

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“…Recently, scientists worldwide have focused on developing effective methods for producing environmentally friendly and more costeffective energy sources. In this regard, great results have been achieved in converting wind, light, and heat energy into electrical energy, which has increased the efficiency of the generated photovoltaic and thermoelectric elements [1][2][3][4][5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Obtaining higher manganese silicide films with high thermoelectric properties

et al. 2023

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This article provides information about the process of obtaining a Mn4Si7 film by magnetron sputtering, its high thermoelectric properties, and the possibility of using the resulting film in instrument-making production. Using the magnetron sputtering method, a thin Mn4Si7 film was obtained, and the composition and structure were studied by a scanning electron microscope. Two-stage cleaning of the silicon surface was used in work. Resistivity was determined by the four-probe method, thermoelectric properties, by the two-probe method. The bandwidth of the Mn4Si7/SiO2 film was measured on a high-precision spectrometer according to the law of light reflection. It is shown that the thermoelectric power of the Mn4Si7 film increases during the transition from the amorphous state to the nanocrystalline one, which is associated with the selective scattering of charge carriers at the boundaries of nanoclusters and Mn4Si7 on SiO2/Si have high speed and high sensitivity. It is shown that this film can be used in thermal detectors radiation waves in the visible and IR ranges.

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Effect of the O 2 + -ion bombardment on the TiN composition and structure

Cited by 10 publications

References 1 publication

Distribution of Molybdenum Atoms over Depth of the Surface Layer of a Niobium Single Crystal Produced by Ion Bombardment

Distribution of Molybdenum Atoms over Depth of the Surface Layer of a Niobium Single Crystal Produced by Ion Bombardment

Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

Obtaining higher manganese silicide films with high thermoelectric properties

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