2000
DOI: 10.1088/0953-8984/12/50/325
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Effect of the size-induced structural transformation on the band gap in CdS nanoparticles

Abstract: The interrelation between particle size, crystal structure and optical properties in semiconductor quantum dots has elicited widespread interest. We report the first attempt at relating the size-induced transformation from a hexagonal to a cubic structure in CdS nanoparticles to a change in the band gap. CdS nanoparticles with particle size in the 0.7-10 nm range were prepared by chemical precipitation using thiophenol as a capping agent. Whereas the band gap for bulk hexagonal CdS is about 2.5 eV, that for 1 … Show more

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Cited by 311 publications
(198 citation statements)
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References 20 publications
(26 reference statements)
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“…The average crystal size of the samples lies in the order of 6.2 ± 2.1 nm. The lattice constant (a) was calculated to be 5.8 Å for these samples, which matches with the earlier reported lattice constant for cubic zinc blend structure of CdS NPs [34].…”
Section: X-ray Diffraction Analysissupporting
confidence: 88%
See 1 more Smart Citation
“…The average crystal size of the samples lies in the order of 6.2 ± 2.1 nm. The lattice constant (a) was calculated to be 5.8 Å for these samples, which matches with the earlier reported lattice constant for cubic zinc blend structure of CdS NPs [34].…”
Section: X-ray Diffraction Analysissupporting
confidence: 88%
“…It was considered that the phase stability between the zinc blende and wurtzite structures of CdS was size dependent. Generally, the cubic CdS nanoparticles exist in smaller sizes and in the wurtzite structure appear larger due to the growth of the particles [17][18][19].…”
Section: Introductionmentioning
confidence: 99%
“…As a mean to achieve this goal, semiconductor photocatalysts have been extensively studied. In particular, a variety of visible light-active photocatalyts [2][3][4][5][6] including CdS [7][8][9][10][11][12][13] have been studied. In terms of the band gap magnitude and the position of band edges, CdS is ideally suited for photocatalytic water splitting but it is not effective at all unless suitable electron donors (EDs) are present.…”
Section: Introductionmentioning
confidence: 99%
“…Mixed compound semiconductors like Cd (1-x) Zn x S, Cd (1-x) Zn x Se, CdSe (1-X) Te X , In 1-x Ga x Sd 1-y As y have potential applications in the fabrication of Photoconductive, Photovoltaic and Solar cells in the field of electronic and optoelectronic devices [1,2]. These compounds have been prepared in thin film form by using sophisticated techniques [3][4][5] to help the process of miniaturization of electronic devices. In general, it is also not simple to prepare bulk material over a wide range of composition due to limited solubility.…”
Section: Introductionmentioning
confidence: 99%