Effect of the Ultra-Thin GaN Interlayer on the Electrical and Photoelectrical Parameters of Au|GaAs Schottky Barrier Diodes

Kacha, Arslane Hatem; Amroun, M. N.; Akkal, B.; Benamara, Z.

doi:10.1134/s1063782621090086

Cited by 3 publications

(2 citation statements)

References 23 publications

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“…ey mostly use organic materials to construct the devices, and the more representative ones are organic smallmolecule solar cells using organic small-molecule materials as the donor and receptor [15]. e new solar cells have the characteristics of little or no pollution to the environment and low material requirement, and also their photoelectric conversion efficiency can be accepted [16][17][18].…”

Section: Related Workmentioning

confidence: 99%

Interfacial Transport Study of Ultra-Thin InN-Enhanced Quantum Dot Solar Cells

Wang

Zhang

2022

Advances in Materials Science and Engineering

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For human society, all activities require energy support. Solar cells are a means of converting solar energy into electrical energy using the photovoltaic effect of semiconductor materials. This photoelectric absorber layer has been developed for more than 70 years. Currently, the layered solar panel industry has achieved an energy conversion efficiency of 47%. In addition to efficiency, the cost of solar cells has been optimized, and the cost of commercial silicon solar cells has been greatly reduced. There is an urgent need for energy transfer research through the solar cell interface. Many researchers are studying and discovering new elements in this field. On this basis, the transmission ion interface of ultra-thin in-amplified quantum solar cell panels was studied, and very effective conclusions were drawn on the basis of experimental preparation and analysis.

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Section: Related Workmentioning

confidence: 99%

Interfacial Transport Study of Ultra-Thin InN-Enhanced Quantum Dot Solar Cells

Wang

Zhang

2022

Advances in Materials Science and Engineering

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“…Various techniques have been explored for detecting THz wireless signals, but the most commonly used method involves a waveguide-integrated detector that employs GaAs Schottky barrier diodes (SBDs) [33,36]. However, SBDs are susceptible to reverse leakage current, which can introduce inaccuracies in the measurement and control of high-frequency circuits [37,38]. The subsequent phase of the receiver mechanism involves demodulating the identified signal to separate the information signal from the carrier signal.…”

Section: Introductionmentioning

confidence: 99%

Floquet engineering-based frequency demodulation method for wireless THz short-range communications

Herath,

Nirmalathas,

Gunapala

et al. 2023

Phys. Scr.

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This study introduces a novel theoretical framework for detecting and decoding wireless communication signals in the nanoscale range operating at terahertz (THz) frequencies. Initially, we investigate the Floquet states in a dressed 2D semiconductor quantum well and derive an analytical expression to determine its longitudinal conductivity. The results indicate that the longitudinal conductivity of a dressed 2D semiconductor can be tailored to specific requirements by manipulating the frequency of the external dressing field. Furthermore, carefully selecting the intensity and polarization type of the external dressing field enables fine-tuning and optimization of the conductivity. To evaluate the effectiveness of each dressing field configuration, we present a Figure of Merit (FoM) assessment that determines the maximum possible change in conductivity within the considered frequency range. The proposed theory introduces a mechanism capable of identifying frequency-modulated communication signals in the THz range and performing frequency demodulation. We comprehensively analyze of the demodulator's transfer function in the receiver. Consequently, we establish that the transfer function exhibits linear behavior over a specific frequency range, rendering it suitable for frequency demodulation. Finally, we provide a numerical illustration of a frequency demodulation scenario. The breakthrough uncovered in this study opens up possibilities for the development of high-efficiency, lightweight, and cutting-edge chip-scale wireless communication devices, circuits, and components.

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