Effect of thermal annealing and cooling rate on CBD grown CdS thin films

Shaikh, Raees A. Gani; More, Sagar A.; Bisen, Gauri G.; Jadkar, Sandesh; Sali, Jaydeep V.; Ghosh, Sanjay S.

doi:10.1007/s10854-019-02238-4

Cited by 2 publications

(1 citation statement)

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“…Mater. 2024, 5 31 It is known that thermal annealing at the proper temperature is crucial to improve the thin-film crystallinity and hence the electrical properties of CdS thin films [11,12]. Furthermore, annealing CdS films under a hydrogen or nitrogen environment decreases the resistivity as a result of increased electron density [13].…”

Section: Introductionmentioning

confidence: 99%

Enhancement of Photo-Electrical Properties of CdS Thin Films: Effect of N2 Purging and N2 Annealing

Sankalpa,

Kumarasinghe,

Dassanayake

et al. 2024

Electronic Materials

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The impact of N2 purging in the CdS deposition bath and subsequent N2 annealing is examined and contrasted with conventional CdS films, which were deposited without purging and annealed in ambient air. All films were fabricated using the chemical bath deposition method at a temperature of 80 °C on fluorine-doped tin oxide glass slides (FTO). N2 purged films were deposited by introducing nitrogen gas into the deposition bath throughout the CdS deposition process. Subsequently, both N2 purged and un-purged films underwent annealing at temperatures ranging from 100 to 500 °C for one hour, either in a nitrogen or ambient air environment. Photoelectrochemical (PEC) cell studies reveal that films subjected to both N2 purging and N2 annealing exhibit a notable enhancement of 37.5% and 27% in ISC (short-circuit current) and VOC (open-circuit voltage) values, accompanied by a 5% improvement in optical transmittance compared to conventional CdS thin films. The films annealed at 300 °C demonstrate the highest ISC, VOC, and VFB values, 55 μA, 0.475 V, and −675 mV, respectively. The improved optoelectrical properties in both N2-purged and N2-annealed films are attributed to their well-packed structure, enhanced interconnectivity, and a higher sulfur to cadmium ratio of 0.76 in the films.

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Section: Introductionmentioning

confidence: 99%