Effect of Thermal Annealing for MgGa₂Se₄Single Crystal Thin Film Grown by Hot Wall Epitaxy

Abstract

The evaporating materials for MgGa 2 Se 4 single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, MgGa 2 Se 4 compounded polycrystal powder was deposited on thoroughly etched semi-insulated GaAs(100) substrate by the hot wall epitaxy (HWE) method system. The source and substrate temperatures of optimized growth conditions, were 610 Received: Oct. 31, 2013, Revised: Dec. 31, 2013, Accepted: Jan. 2, 2014 This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License(http://creativecommons.org/ licenses/bync/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.