2003
DOI: 10.1063/1.1582359
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Effect of thermal annealing on the lifetime of polymer light-emitting diodes

Abstract: Thermal annealing of a polymer light-emitting diode (PLED) is shown to result in a remarkable improvement in the long-term stability of the device. The annealing for such a PLED has to be layer-specific in that the annealing should be carried out for the layer with the lowest glass transition temperature (Tg) to harvest the benefits of annealing. Annealing of this key layer, which is usually the emitting layer, can enhance the thermal stability of the device. The best half-life is obtained at an annealing temp… Show more

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Cited by 62 publications
(32 citation statements)
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“…The maximum luminous efficiency and the half-life of the device using the PEDOT/PSS layer that are obtained after the emitting polymer film was baked at 130°C for 15 min are reasonable values according to the previous literature for devices using green-light-emitting polyfluorene derivatives. [28,29] Therefore, the remarkable improvement indicates that the compositions including perfluorinated ionomers can be one of the promising hole-injection buffer materials for enhancing the device lifetime. Since the fluorocarbon sulfonic acids in the HIL preferentially reside on the film surface, this type of HIL can effectively block the impurities stemming from PEDOT/PSS and ITO (alkali metal, sulfate, In, Sn, etc.).…”
Section: Full Papermentioning
confidence: 99%
“…The maximum luminous efficiency and the half-life of the device using the PEDOT/PSS layer that are obtained after the emitting polymer film was baked at 130°C for 15 min are reasonable values according to the previous literature for devices using green-light-emitting polyfluorene derivatives. [28,29] Therefore, the remarkable improvement indicates that the compositions including perfluorinated ionomers can be one of the promising hole-injection buffer materials for enhancing the device lifetime. Since the fluorocarbon sulfonic acids in the HIL preferentially reside on the film surface, this type of HIL can effectively block the impurities stemming from PEDOT/PSS and ITO (alkali metal, sulfate, In, Sn, etc.).…”
Section: Full Papermentioning
confidence: 99%
“…[44][45][46][47] In our device-fabrication process, a toluene solution of WPF-BT-3 (concentration: 15 mg mL -1 ) was spin-coated on a PEDOT: PSS-modified ITO substrate, after which the device was thermally annealed at 70°C for 1 h in vacuum before cathode deposition. The resulting device emitted white light with CIE coordinates of (0.35,0.34), turn-on voltage of 3.5 V, luminance efficiency of 8.99 cd A -1 , power efficiency of 5.75 lm W -1 , external quantum efficiency of 3.8 %, and a maximum brightness of 12 680 cd m -2 .…”
Section: Full Papermentioning
confidence: 99%
“…[25,26] Therefore, the stability of multilayer whitelight-emitting PLEDs is expected to be better than that of previously reported white-light-emitting PLEDs. [27] Figures 3a,b show the emission spectra obtained from type I and II devices at different applied voltages.…”
mentioning
confidence: 97%