Effect of thermal annealing on the optical properties of CdGeAs2 wafers

Huang, Wei; Zhao, Beijun; Zhu, Shuang; He, Z. Y.; Chen, Baojun; Li, Jiawei; Yu, You; Tang, Jieying; Liu, Weijia

doi:10.1016/j.jcrysgro.2011.11.090

Cited by 7 publications

(4 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore, in this work, to improve the quality of the as-grown AgGaGeS 4 single crystals grown by the modified vertical Bridgman method, systematic thermal annealing experiments were carried out with a AgGaGeS 4 polycrystalline powder and in vacuum at 500, 550, 600, 650, and 700 °C, respectively. Through analysis and a discussion of the composition, structure, and optical and electrical properties, the optimizing annealing parameters were obtained, and the absorptions located at 2.9, 4, and 10 μm were eliminated.…”

Section: Introductionmentioning

confidence: 99%

“…13 Rame et al annealed the crystal under static vacuum, which was the vacuum initially imposed in the ampule, at 600 °C for 250 h. 8, 27 However, these investigations on annealing experiments are not very detailed, and it cannot achieve improvement of the optical properties and even would damage the crystal upon annealing at relatively high temperature. Therefore, in this work, to improve the quality of the asgrown AgGaGeS 4 single crystals grown by the modified vertical Bridgman method, systematic thermal annealing experiments were carried out with a AgGaGeS 4 polycrystalline powder and in vacuum 28 at 500, 550, 600, 650, and 700 °C, respectively. Through analysis and a discussion of the composition, structure, and optical and electrical properties, the optimizing annealing parameters were obtained, and the absorptions located at 2.9, 4, and 10 μm were eliminated.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Effect of Thermal Annealing Treatment and Defect Analysis on AgGaGeS₄ Single Crystals

Huang

Zhao

et al. 2019

Inorg. Chem.

Self Cite

View full text Add to dashboard Cite

AgGaGeS4 is a new promising nonlinear-optical crystal for frequency-shifting a 1.064 μm laser into mid-IR. This quaternary compound single crystal has been successfully grown by a modified vertical Bridgman method. Although it has high transparency in the 0.5–11.5 μm spectral range, the nonideal transparency at 2.9, 4, and 10 μm restricts further optical experiments and applications. Therefore, in this work, AgGaGeS4 wafers were annealed in vacuum and with a AgGaGeS4 polycrystalline powder at different temperatures. After annealing, under certain conditions, the optical quality of AgGaGeS4 wafers shows evident improvement, and it is found that volatile GeS2 easily results in stoichiometric deviation, even decomposition, so that the choice of temperature plays a pivotal role in the annealing treatment. Conclusively, the results confirm that thermal annealing could effectively improve the optical quality of the as-grown AgGaGeS4 crystal and annealings with a AgGaGeS4 polycrystalline powder at 550 °C and in vacuum at 500 °C are optimum processes. After such treatment, the transmittance of the wafer is about 70% and the absorptions at 2.9, 4, and 10 μm have almost been eliminated. Besides, the binding energy tends to get smaller with increasing temperature and the Raman phonon frequency has scarcely changed, indicating that the thermal annealing processes only renovate the crystal structure by atomic diffusion or dislocation climbing but without changes in the main structure. At last, through Hall measurement and positron annihilation lifetime spectroscopy, we find that the carrier concentration has little change after annealing, while the cation vacancy sharply declines, and the trapping state of the positron is mainly attributed by the substitution of Ge4+ by Ga3+.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of Thermal Annealing Treatment and Defect Analysis on AgGaGeS₄ Single Crystals

Huang

Zhao

et al. 2019

Inorg. Chem.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Since the late 1960s, there have been many experimental studies on CdGeAs 2 crystals, including photoluminescence [11], optical parametric oscillator [12], p-type CdGeAs 2 luminescence and optical absorption [13], CdGeAs 2 defects and doping [14,15], etc. However, compared to the experimental research, there are few theoretical studies.…”

Section: Introductionmentioning

confidence: 99%

The Electronic Structure and Optical Properties of CdGeAs2 Crystal: A DFT and HSE06 Study

et al. 2022

View full text Add to dashboard Cite

The electronic structural and optical properties of CdGeAs2 crystals are calculated by using the Perdew–Burke–Ernzerhof (PBE) functional within generalized gradient approximation (GGA) and the Heyd–Scuseria–Ernzerhof (HSE06) functional. The results show that CdGeAs2 is an optical crystal with a direct bandgap of 0.71 eV by using the HSE06 functional method, which is closer to the experimental value. The Mulliken population and differential charge density analysis indicate that the Ge–As and Cd–As bonds have covalent properties, and that the covalent bond of Cd–As is visibly stronger than that of the Ge–As bond. The optical properties show that the CdGeAs2 crystal has strong absorption and reflection in the ultraviolet region and strong transmittance in the infrared region. The average static refractive index of CdGeAs2 is 2.96, and the static birefractive index is 0.08. The results show that CdGeAs2 is an excellent optical material of potential applications in the middle and far infrared.

show abstract

“…The optical properties give a chance for their use in photovoltaics. Variable energy gap of Zn x 1-Cd x GeAs 2 alloys (with E 0.53 G = -1.15 eV) [6][7][8][9] may be used to construct lasers with controllable light emission energy (optical properties of CdGeAs 2 wafers may be adjusted via thermal annealing) [10]. Magnetic properties of the Mn-alloyed II-IV-V 2 materials are very interesting.…”

Section: Introductionmentioning

confidence: 99%

Composite Zn_1−xCd_xGeAs₂semiconductors: structural and electrical properties

Kilański

Reszka

Górska

et al. 2016

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

We present the studies of structural, transport and magnetotransport properties of [Formula: see text]Cd GeAs crystals with the chemical content changing from 0 to 1. The structural studies indicate that this alloy exists as a composite two-phase material in almost the entire range of average chemical compositions. The two phase nature of our samples does have a significant influence on the carrier transport and magnetotransport of the composite alloy. The change of the conductivity type is observed at room temperature, from p-type for [Formula: see text] to n-type for x > 0.18, respectively. The Hall carrier mobility measured at room temperature decreases as a function of x from about 35 cm (V · s) for the sample with x = 0 down to 3 cm (V · s) for the sample with x = 0.233. For x > 0.233 the Hall carrier mobility shows an increase with x, up to the highest value around 875 cm (V · s) observed for the sample with x = 1. Temperature dependent resistivity measurements indicate the presence of thermal activation of carriers with activation energy, E , with values from 20 to 30 meV for all the studied samples. The temperature dependent Hall effect data show that the grain boundary limited transport is strong in all our samples. For the samples with [Formula: see text] the negative MR is observed at temperatures lower than 100 K and at low magnetic field values, [Formula: see text] T. This effect is interpreted as a weak localization phenomenon with low values of phase coherence length, [Formula: see text] nm.

show abstract

Effect of thermal annealing on the optical properties of CdGeAs2 wafers

Cited by 7 publications

References 22 publications

Effect of Thermal Annealing Treatment and Defect Analysis on AgGaGeS₄ Single Crystals

Effect of Thermal Annealing Treatment and Defect Analysis on AgGaGeS₄ Single Crystals

The Electronic Structure and Optical Properties of CdGeAs2 Crystal: A DFT and HSE06 Study

Composite Zn_1−xCd_xGeAs₂semiconductors: structural and electrical properties

Contact Info

Product

Resources

About

Effect of thermal annealing on the optical properties of CdGeAs2 wafers

Cited by 7 publications

References 22 publications

Effect of Thermal Annealing Treatment and Defect Analysis on AgGaGeS4 Single Crystals

Effect of Thermal Annealing Treatment and Defect Analysis on AgGaGeS4 Single Crystals

The Electronic Structure and Optical Properties of CdGeAs2 Crystal: A DFT and HSE06 Study

Composite Zn1−xCdxGeAs2semiconductors: structural and electrical properties

Contact Info

Product

Resources

About

Effect of Thermal Annealing Treatment and Defect Analysis on AgGaGeS₄ Single Crystals

Effect of Thermal Annealing Treatment and Defect Analysis on AgGaGeS₄ Single Crystals

Composite Zn_1−xCd_xGeAs₂semiconductors: structural and electrical properties