Effect of thermal annealing on the electrical characteristics of an amorphous ITZO:Li thin film transistor fabricated using the magnetron sputtering method

Li, Ran; Dai, Shiqian; Su, Jinbao; Ma, Yafeng; Wang, Ye; Zhou, Dongzhan; Zhang, Xiqing

doi:10.1016/j.mssp.2019.02.005

Cited by 10 publications

(6 citation statements)

References 18 publications

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“…The physical properties (microstructure, electrical, and optical properties) of ITZO thin films depend greatly on the composition of the sputtering target and the experimental conditions. There are several methods to deposit ITZO thin films such as spin-coating [8], plasma-enhanced atomic layer deposition [9], RF magnetron sputtering [10], ultrasonic spray pyrolysis deposition [11], high-density plasma sputtering [12], and more. Among them, the films obtained by RF magnetron sputtering have high purity and combinate well with the substrates, so in this study, we choose the RF magnetron sputtering method to fabricate ITZO thin films.…”

Section: Introductionmentioning

confidence: 99%

“…To obtain high-quality ITZO thin films, there are two sets of parameters in the fabrication: sputtering process and postdeposition process. Post-deposition treatments include postannealing [13][14][15], ionizing radiation [16], laser radiation plasma treatment [17], and ultraviolet radiation [18] etc. Among them, post-annealing treatment is a simple and effective method to improve the quality of thin films and devices.…”

Section: Introductionmentioning

confidence: 99%

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Influence of annealing temperature on the optoelectronic properties of ITZO thin films

et al. 2021

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In this work, the electrical conductivity and optical transparency of the In-Sn-Zn-O (ITZO) films annealed at different temperatures were investigated. The results show that the ITZO films transformed from amorphous phase to crystalline phase after annealed in the air. The transmittance of the films improves significantly and all exceed 88%. Meanwhile, the annealed ITZO films exhibit a significant enhancement in conductivity. In particular, ITZO film annealed at 650 °C has high electrical conductivity (∼4.94×10 2 S cm −1 ) and an excellent figure of merit (∼5.94×10 −4 Ω −1 ). Moreover, ITZO thin film transistors were prepared and their performance was tested. After annealing, the high electrical properties of the active layer make the gate regulation ability of the thin film transistors degrade. The annealed films with excellent optoelectronic properties can be applied to transparent electrodes.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Influence of annealing temperature on the optoelectronic properties of ITZO thin films

et al. 2021

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“…However, in MOs, doping plays a different role in balancing mobility and stability. In 2018, Li et al [50] doped lithium (Li) into ITZO thin films and discovered that Li could regulate oxygen vacancies. This reduced scattering centers and increased mobility, resulting in the mobility of 39.1 cm 2 /(V•s).…”

Section: Dopingmentioning

confidence: 99%

Advances in mobility enhancement of ITZO thin-film transistors: a review

Chen,

Zhang,

Wan

et al. 2023

J. Semicond.

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Indium-tin-zinc oxide (ITZO) thin-film transistor (TFT) technology holds promise for achieving high mobility and offers significant opportunities for commercialization. This paper provides a review of progress made in improving the mobility of ITZO TFTs. This paper begins by describing the development and current status of metal-oxide TFTs, and then goes on to explain the advantages of selecting ITZO as the TFT channel layer. The evaluation criteria for TFTs are subsequently introduced, and the reasons and significance of enhancing mobility are clarified. This paper then explores the development of high-mobility ITZO TFTs from five perspectives: active layer optimization, gate dielectric optimization, electrode optimization, interface optimization, and device structure optimization. Finally, a summary and outlook of the research field are presented.

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“…Thus, compared with a-IGZO TFTs, a-IZTO TFTs with a-IZTO as active channel are expected to be high-mobility oxide TFTs [12]. The deposition of a-IZTO had been reported by solution or sputtering process [13][14][15]. Although solution process is a low-cost and large-area process, many defects will be produced in the a-IZTO film due to the solution process, resulting in the decreased mobility.…”

Section: Introductionmentioning

confidence: 99%

New Low-Voltage Driving Compensating Pixel Circuit Based on High-Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistors for High-Resolution Portable Active-Matrix OLED Displays

et al. 2020

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In recent years, active-matrix organic light-emitting diodes (AMOLEDs) has been the most popular display for portable application. To satisfy the requirement for the application of the portable display, the design of the compensating pixel circuit with the low-voltage driving and low-power consumption will be requested. In addition to the circuit with the design of the low-voltage driving, high-mobility thin-film transistors as driving device will be also necessary in order to supply larger driving current at low-voltage driving. Therefore, the study presents a new low-voltage driving AMOLED pixel circuit with high-mobility amorphous indium–zinc–tin–oxide (a-IZTO) thin-film transistors (TFTs) as driving device for portable displays with high resolution. The proposed pixel circuit can simultaneously compensate for the threshold voltage variation of driving TFT (ΔVTH_TFT), OLED degradation (ΔVTH_OLED), and the I-R drop of a power line (ΔVDD). By using AIM-Spice for simulation based on fabricated a-IZTO TFTs with mobility of 70 cm2V−1S−1 as driving devices, we discovered that the error rates of the driving current were all lower than 5.71% for all input data when ΔVTH_TFT = ±1 V, ΔVDD = 0.5 V, and ΔVTH_OLED = 0.5 V were all considered simultaneously. We revealed that the proposed 5T2C pixel circuit containing a high-mobility a-IZTO TFT as a driving device was suitable for high-resolution portable displays.

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Effect of thermal annealing on the electrical characteristics of an amorphous ITZO:Li thin film transistor fabricated using the magnetron sputtering method

Cited by 10 publications

References 18 publications

Influence of annealing temperature on the optoelectronic properties of ITZO thin films

Influence of annealing temperature on the optoelectronic properties of ITZO thin films

Advances in mobility enhancement of ITZO thin-film transistors: a review

New Low-Voltage Driving Compensating Pixel Circuit Based on High-Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistors for High-Resolution Portable Active-Matrix OLED Displays

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