Effect of Thermal Diffuse Scattering in Triple-Crystal Diffractometry with High-Energy Synchrotron Radiation

Abstract

The thermal diffuse scattering around reflection 220 of a thick, perfect silicon crystal has been studied quantitatively by means of a triple-crystal diffractometer and 100 keV synchrotron radiation. The necessary fitting procedures were simplified by deriving an analytic solution to the instrumental resolution function for nondispersive setting of three perfect crystals. The temperature and e t dependence of the thermal diffuse scattering are very well described, taking only acoustical phonons into account; the contribution of optical phonons has been calculated explicitly.

Accurate structure-factor measurements using high-energy synchrotron radiation: a test on cuprite, Cu2O

“…A detailed investigation of TDS using high-energy synchrotron radiation has been presented by Schmidt et al (1998).…”

X‐ray in situ observation of oxygen precipitation in silicon confirmed with ex situ detection methods

“…In the present work a focusing Laue diffractometer is used to analyze the strain generated by growing BMDs in CZ grown semiconductor silicon. This method is called SFD setup and works, in contrast to beam lines at neutron or synchrotron facilities 3–6, with polychromatic and divergent beams in a laboratory 7. By using appropriate thermal treatments major features of the diffraction curves can be linked with parameters of BMDs which are gained by conventional analytic techniques.…”

In situ observation of formation and growth of oxygen nano-precipitates in silicon with high energy X-rays from a laboratory source

“…This has been shown for neutrons [3,4] and for synchrotron radiation (e.g. [5,6]) by assigning changes of the diffraction behavior of a silicon sample to its internal defect structure via the characteristic strain field [2].…”

“…This is in contrast to the publications based on synchrotron radiation which is collimated and used in a monochromatic mode (e.g. [5,6]). Using a focusing Laue diffractometer to analyze BMDs via the effect of their strain fields on the intensity of a Bragg peak of the silicon host material will be referred to as strain field diffraction (SFD) in the following.…”