Effect of thermal stress on the performance of HgCdTe/Si diodes and FPAs

Abstract

As a typical hetero-epitaxial material, the HgCdTe film which directly grows on the Si substrate possesses great residual stress for the large lattice and thermal expansion mismatch. Thermal stress caused by the thermal expansion mismatch dominates the stress mechanism after growth and seriously affects the device performance. In this paper, the performance of the HgCdTe/Si material, diodes and focal plane arrays under different thermal stress condition was studied. The experimental results indicate that the performance regularly changes with the thermal stress and all the results can be duplicated and recoverable. By analyzing the changes of the energy band under different stress conditions, it was found that the stress in the HgCdTe film impacts the film's characteristics. The HgCdTe film with tensile stress exhibits higher electron mobility, while with the compressive stress, the film exhibits higher hole mobility than that of the bulk HgCdTe crystal. Finally, the theoretical analysis can explain the experimental results well.