Tin oxide (SnO2) holds significance as an n-type semiconductor metal oxide, finding diverse applications across various fields. It has optimal properties as a gas sensing material, fuel cells, batteries, and so on. The main objective of this research is to synthesize SnO2 thin films at a low-cost, easily replicable method and study its crystallographic properties. Here, the thin film was prepared by electrodeposition using tin sulfate, tartaric acid, and potassium nitrate at 2.1 pH followed by annealing the obtained thin film at 773 K. The whole process was conducted at 300 K without any external DC. The synthesized substrate was crystallographic properties were studied using X-ray diffraction. The average crystallite grain size was evaluated to be around 19 nm with degree of crystallinity close to 48.3%. These outcomes show that the method used to create thin films was in an appropriate direction.