Effect of Thickness of Molybdenum Nano-Interlayer on Cohesion between Molybdenum/Titanium Multilayer Film and Silicon Substrate

Abstract

Titanium (Ti) film has been used as a hydrogen storage material. The effect of the thickness of a molybdenum (Mo) nano-interlayer on the cohesive strength between a Mo/Ti multilayer film and a single crystal silicon (Si) substrate was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), and nano-indenter. Four groups of Si/Mo/Ti multilayer films with different thicknesses of Mo and Ti films were fabricated. The XRD results showed that the introduction of the Mo layer suppressed the chemical reaction between the Ti film and Si substrate. The nano-indenter scratch results demonstrated that the cohesion between the Mo/Ti film and Si substrate decreased significantly with increasing Mo interlayer thickness. The XRD stress analysis indicated that the residual stress in the Si/Mo/Ti film was in-plane tensile stress which might be due to the lattice expansion at a high film growth temperature of 700 °C and the discrepancy of the thermal expansion coefficient between the Ti film and Si substrate. The tensile stress in the Si/Mo/Ti film decreased with increasing Mo interlayer thickness. During the cooling of the Si substrate, a greater decrease in tensile stress occurred for the thicker Mo interlayer sample, which became the driving force for reducing the cohesion between the Mo/Ti film and Si substrate. The results confirmed that the design of the Mo interlayer played an important role in the quality of the Ti film grown on Si substrate.

Characteristic and Catalytic Performance of Co and Co-Mo Metal Impregnated in Sarulla Natural Zeolite Catalyst for Hydrocracking of MEFA Rubber Seed Oil into Biogasoline Fraction

“…However, Sadek et al (2019) reported that the oxide phase of Co metal was observed at 2 = 36.80°, 59.30°, dan 65.20° [24]. On the other hand, the diffraction peaks for Mo metal were reported at 2θ = 57.76° and 72.87° [25].…”

Quantitative and nondestructive determination of residual stress for SiO2 thin film by laser-generated surface acoustic wave technique

“…The stress measured by the curvature method are residual compressive stress, which is consistent with the SAW method. There is a slight difference in the SAW determination results between [100] and [110] direction, which might be caused by the differences in thermal expansion coefficients and elastic modulus due to the different atomic arrangement in different crystallographic orientations of the anisotropic Si substrate [33,36,37]. All three sets of data show the same trend, and the residual compressive stress in the SiO 2 film decreases as the film thickness increases, proving the feasibility of the SAW method [38].…”

Synthesis and Modification of Nanostructured Thin Films

“…The major compounds of key interest were studied, including AlGaN [1], Cu NWs [2], photonic crystal fibers [3], LiNbO 3 [4], Au nanoparticles [5], Al 2 O 3 /Tm 2 O 3 [6], Ge-DLC [7], Mo/Ti [8], ZnTe:Cu [9], Ge–Sb–Te [10], noble metal nanoparticles [11], collagen/Zn 2+ -substituted calcium phosphates [12], TiO 2 [13], Si-DLC [14], SHG in ZnO nanofilms [15], Cu 2 Mg x Zn 1−x SnS 4 [16], ethylene vinyl acetate (EVA) matrices [17], and LIPSS [18].…”