Effect of thickness on structural, optical, and optoelectrical properties of sprayed CuInSnS4 thin films as a new absorber layer for solar cells

Radaf, I.M. El; Hassanien, Ahmed Saeed

doi:10.1016/j.physb.2023.414867

Cited by 50 publications

(3 citation statements)

References 70 publications

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“…The changes in the dielectric constant and energy loss functions due to doping can be attributed to the alterations in the density of localized states within the optical band gap and the rotation of dipoles when ZnWO 4 is alloyed with varying amounts of CdS. [44][45][46][47] Figure 10 illustrates the changes in optical conductivity (σ opt ) based on the photon energy of the incident wave in the (1−x)ZnWO 4 /xCdS system. From the graph, it can be observed that the σ opt value initially increased with increasing photon energy, reaching its maximum value, and then lowered as the photon energy rose.…”

Section: Resultsmentioning

confidence: 99%

The Influence of CdS on the Structural and Optical Properties of Nano ZnWO₄

Heiba,

Farag,

Abozied

et al. 2024

ECS J. Solid State Sci. Technol.

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We investigated the influence of CdS on the structural and optical properties of nano ZnWO4 for optical applications. (1−x)ZnWO4/xCdS (x; 0 to 0.25) heterojunctions were formed and the structure and microstructure of the ZnWO4 and CdS phases developed were investigated using Rietveld refinement analysis for synchrotron X-ray diffraction data. Phase analysis revealed the phase percentage of the CdS phase is always less than the nominated value (x), implying merging of some Cd and S into ZnWO4. Raman spectra showed CdS peaks, confirming the existence of CdS. Scanning electron microscopy showed two distinct morphologies: plate-like particles (ZnWO4 phase) and spherical shape (CdS phase). UV–vis diffuse measurements revealed enhancement of absorbance and reduction in reflectance and transmittance, in the range 300–56 nm, as the amount of CdS (x) increased in the (1−x)ZnWO4/xCdS system. Band gap of the ZnWO4 phase reduced from 4.0 eV for x = 0.0 to 3.9, 3.6, and 2.9 eV for x = 0.05, 0.1, and 0.25, respectively. The highest refractive index values were obtained as the amount of CdS reached 0.05. Impact of alloying on linear and nonlinear parameters and emitted photoluminescence spectra was studied. Upon loading ZnWO4 with CdS, the PL intensity is greatly quenched and the whole spectrum is red shifted, from 480 to 540 nm. CIE chromaticity diagrams show that ZnWO4 sample without any doping exhibits a blue color while the doped system reveals green-yellow colors.

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Section: Resultsmentioning

confidence: 99%

The Influence of CdS on the Structural and Optical Properties of Nano ZnWO₄

Heiba,

Farag,

Abozied

et al. 2024

ECS J. Solid State Sci. Technol.

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“…This research aimed to explore their integration into numerous public and private initiatives designed to address the nation's growing electricity needs [33][34][35][36]. So far, the initial iteration of solar cells, which rely on crystalline semiconductors like silicon and gallium arsenide, introduced in the 1970s, remains the topperforming technology [37].…”

Section: Introductionmentioning

confidence: 99%

Preparation of nanostructured cuprous oxide (Cu₂O) absorber layer for photovoltaic application

Awal,

Tanisa,

Rahman

et al. 2024

Micro & Nano Letters

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In this investigation, a nanostructured Cu2O thin film absorber layer is electrodeposited, exploring the impact of varying negative applied voltages and deposition time. Notably, the Cu2O thin film demonstrated optimal absorbance at −0.95 V, contrasting sharply with a minimum at −0.97 V. The authors' findings underscore that the peak absorbance was achieved at −0.95 V, coinciding with the lowest transmittance observed after 80 min of deposition, aligning with a maximal absorption coefficient of 21 × 103 cm−1. At a deposition time of 5 min, the Cu2O thin film exhibited a noteworthy maximum Urbach energy of 2.00 eV and a minimum steepness parameter of 0.013. In contrast, the lowest Urbach energy was recorded at 0.34 eV, with the highest steepness parameter occurring at an applied voltage of 0.93 V. Furthermore, this study revealed a gradual increase in the refractive index with higher applied voltages, reaching its pinnacle at −1.5 V. These results collectively emphasize the nuanced interplay between applied voltage, deposition time and the optical properties of the nanostructured Cu2O thin film. The observed trends hold significant implications for optimizing the performance of thin film absorber layers, particularly in the context of enhancing absorbance and tailoring optical characteristics for specific applications.

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“…31 Elradaf et al successfully prepared the CuInSnS 4 thin films using a simple spray system with good electrical conductivity, nonlinear optical indices, narrow band gap, and significant absorption coefficient. 32 Moreover, Hameed et al Fabricate the CuInGeSe 4 films and Si/CuInGeSe 4 heterojunction by thermal evaporation. These films display an excellent refractive index, high extinction coefficient, solar efficiency of 3.37%, and a small energy gap.…”

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confidence: 99%

Structural, Optical and Optoelectrical Properties of CuAlSnS₄ Thin Films

El Radaf,

Al-Zahrani

2024

ECS J. Solid State Sci. Technol.

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The present study used chemical deposition to deposit thin copper aluminum tin sulfide (CATS4) layers onto clean glass substrates. X-ray diffraction analysis was utilized to explore the crystalline structure of the CATS4 films, which refers to the CATS4 films having a cubic crystal structure. Energy-dispersive X-ray analysis showed the presence of Cu, Al, Sn, and S peaks in the CATS4 films, and their atomic ratio is close to 1:1:1:4. Spectrophotometric measurements of optical transmittance and reflectance spanning the 400–2500 nm spectral range were performed to describe the optical properties of the CATS4 layers. The CATS4 films demonstrated a direct energy gap transition between 1.42 and 1.31 eV. Further, increasing the layer thickness enhanced the refractive index and Urbach energy of the CATS4 films. The inspected CATS4 films showed better optoelectrical properties with increasing thickness, including improved optical conductivity, optical resistivity, optical carrier concentration, relaxation time, and optical mobility. Increasing the thickness of the CATS4 films increased their nonlinear optical indices. Additionally, the hot probe apparatus verified the p-type semiconducting characteristics of CATS4 films.

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Effect of thickness on structural, optical, and optoelectrical properties of sprayed CuInSnS4 thin films as a new absorber layer for solar cells

Cited by 50 publications

References 70 publications

The Influence of CdS on the Structural and Optical Properties of Nano ZnWO₄

The Influence of CdS on the Structural and Optical Properties of Nano ZnWO₄

Preparation of nanostructured cuprous oxide (Cu₂O) absorber layer for photovoltaic application

Structural, Optical and Optoelectrical Properties of CuAlSnS₄ Thin Films

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Effect of thickness on structural, optical, and optoelectrical properties of sprayed CuInSnS4 thin films as a new absorber layer for solar cells

Cited by 50 publications

References 70 publications

The Influence of CdS on the Structural and Optical Properties of Nano ZnWO4

The Influence of CdS on the Structural and Optical Properties of Nano ZnWO4

Preparation of nanostructured cuprous oxide (Cu2O) absorber layer for photovoltaic application

Structural, Optical and Optoelectrical Properties of CuAlSnS4 Thin Films

Contact Info

Product

Resources

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The Influence of CdS on the Structural and Optical Properties of Nano ZnWO₄

The Influence of CdS on the Structural and Optical Properties of Nano ZnWO₄

Preparation of nanostructured cuprous oxide (Cu₂O) absorber layer for photovoltaic application

Structural, Optical and Optoelectrical Properties of CuAlSnS₄ Thin Films