Effect of thickness on the performance of solar blind photodetectors fabricated using PLD grown β-Ga2O3 thin films

Shen, Hao; Baskaran, Karthikeyan; Yin, Yinong; Tian, Kun; Duan, Libing; Zhao, Xiaoru; Tiwari, Ashutosh

doi:10.1016/j.jallcom.2019.153419

Cited by 85 publications

(36 citation statements)

References 26 publications

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“…It should be noted that although the nanowire PD contains both nanowires and film structures, the influence of unetched Ga 2 O 3 film on the photoresponse variation is far less than that of nanowires, which is consistent with the simulation results ( Figure 4B). Shen et al [11] have reported the effect of thickness on the performance of solar-blind PD based on β-Ga 2 O 3 films. They have obtained the pretty high I light /I dark ratio (6.7 × 10 4 ) after thickness optimization (∼250 nm).…”

Section: Resultsmentioning

confidence: 99%

“…Recently, Ga 2 O 3 has gained added interest as a promising candidate for solar-blind photodetection because of its wide bandgap of 4.5-4.9 eV, good chemical and thermal stability [5][6][7][8]. Ga 2 O 3 -based solarblind PDs are mainly fabricated on β-Ga 2 O 3 with different forms, including single crystals [9,10], thin films [11,12], individual nanowire/nanowires [13,14] and nanowire arrays [15][16][17]. Among them, vertical nanowire arrays can exhibit obvious advantages in optical absorption and carrier generation due to high surface-to-volume ratio and effective light-trapping absorption, which will enable Ga 2 O 3 PDs with higher performance.…”

Section: Introductionmentioning

confidence: 99%

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Solar-blind ultraviolet photodetector based on vertically aligned single-crystalline β-Ga₂O₃ nanowire arrays

Zhang

Xiu

et al. 2020

Nanophotonics

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Vertically aligned nanowire arrays, with high surface-to-volume ratio and efficient light-trapping absorption, have attracted much attention for photoelectric devices. In this paper, vertical β-Ga2O3 nanowire arrays with an average diameter/height of 110/450 nm have been fabricated by the inductively coupled plasma etching technique. Then a metal-semiconductor-metal structured solar-blind photodetector (PD) has been fabricated by depositing interdigital Ti/Au electrodes on the nanowire arrays. The fabricated β-Ga2O3 nanowire PD exhibits ∼10 times higher photocurrent and responsivity than the corresponding film PD. Moreover, it also possesses a high photocurrent to dark current ratio (Ilight/Idark) of ∼104 and a ultraviolet/visible rejection ratio (R260 nm/R400 nm) of 3.5 × 103 along with millisecond-level photoresponse times.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Solar-blind ultraviolet photodetector based on vertically aligned single-crystalline β-Ga₂O₃ nanowire arrays

Zhang

Xiu

et al. 2020

Nanophotonics

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“…PLD of Ga 2 O 3 has been demonstrated previously and most of these early references primarily investigate the material quality of β-Ga 2 O 3 deposited on Al 2 O 3 . [3][4][5][6] Later, pulsed laser deposited β-Ga 2 O 3 on Al 2 O 3 has also been used for demonstrating device applications, such as solar-blind UV detectors [7,8] and Schottky diodes, for instance, with Cu, [9] Ni, [10] and Ir [11] contacts. Silicon, a common impurity in Ga 2 O 3 grown from melt, has been shown to be acting as a donor and contribute to the n-type character of substrates, presumably residing on substitutional Ga sites.…”

Section: Introductionmentioning

confidence: 99%

High‐Quality Si‐Doped β‐Ga₂O₃ Films on Sapphire Fabricated by Pulsed Laser Deposition

Khartsev

Nordell

Hammar

et al. 2020

Physica Status Solidi (b)

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Pulsed laser ablation is used to form high‐quality silicon‐doped β‐Ga2O3 films on sapphire by alternatively depositing Ga2O3 and Si from two separate sources. X‐ray analysis reveals a single crystallinity with a full width at half maximum for the rocking curve around the (−201) reflection peak of 1.6°. Silicon doping concentration is determined by elastic recoil detection analysis (ERDA), and the best electrical performance is reached at a Si concentration of about 1 × 1020 cm−3, using optimized deposition parameters. It is found that a high crystalline quality and a mobility of about 2.9 cm2 (V s)−1 can be achieved by depositing Si and Ga2O3 from two separate sources. Two types of Schottky contacts are fabricated: one with a pure Pt and one with a PtOx composition. Electrical results from these structures are also presented.

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“…Additionally, according to Shen et al., as the thickness of the β‐Ga 2 O 3 film increases, the surface roughness and maximum photocurrent increase. [ 32 ] If the thickness of the as‐grown β‐Ga 2 O 3 thin film was thicker than that of the transformed β‐Ga 2 O 3 thin film, we must discuss about reason why the roughness of the transformed β‐Ga 2 O 3 film is lower and the width of photocurrent increase is small. On the other hand, as the thickness of the transformed β‐Ga 2 O 3 film is thicker than 0.3 µm, even if the thicknesses of the two thin films are different, it is not expected that the truth of our claim will be affected.…”

Section: Resultsmentioning

confidence: 99%

Formation of High‐Quality Heteroepitaxial β‐Ga₂O₃ Films by Crystal Phase Transition

Lee

Kim

Ahn

et al. 2020

Crystal Research and Technology

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Sn‐doped ɛ‐phase dominant Ga2O3 films (ɛ‐Ga2O3 films) are grown on c‐plane sapphire substrates using metal–organic vapor‐phase epitaxy and transformed to β‐phase films by thermal annealing. The morphological and electrical properties of the phase‐transformed β‐Ga2O3 films dependent on experimental conditions are characterized. The ɛ‐Ga2O3 film is completely transformed to the β‐phase by thermal annealing to realize a high electrical conductivity while maintaining a good surface flatness. When the ɛ‐Ga2O3 films are grown, a mixing ratio of the β‐Ga2O3 component to the ɛ‐Ga2O3 film is controlled to improve the crystalline quality of the β‐Ga2O3 films transformed from ɛ‐Ga2O3 by annealing (transformed β‐Ga2O3). Compared to an as‐grown β‐Ga2O3 film, higher‐quality heteroepitaxial β‐Ga2O3 films with better electrical conductivity and surface morphology can be obtained by the phase transition method, and these results show adequate repeatability.

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Effect of thickness on the performance of solar blind photodetectors fabricated using PLD grown β-Ga2O3 thin films

Cited by 85 publications

References 26 publications

Solar-blind ultraviolet photodetector based on vertically aligned single-crystalline β-Ga₂O₃ nanowire arrays

Solar-blind ultraviolet photodetector based on vertically aligned single-crystalline β-Ga₂O₃ nanowire arrays

High‐Quality Si‐Doped β‐Ga₂O₃ Films on Sapphire Fabricated by Pulsed Laser Deposition

Formation of High‐Quality Heteroepitaxial β‐Ga₂O₃ Films by Crystal Phase Transition

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Effect of thickness on the performance of solar blind photodetectors fabricated using PLD grown β-Ga2O3 thin films

Cited by 85 publications

References 26 publications

Solar-blind ultraviolet photodetector based on vertically aligned single-crystalline β-Ga2O3 nanowire arrays

Solar-blind ultraviolet photodetector based on vertically aligned single-crystalline β-Ga2O3 nanowire arrays

High‐Quality Si‐Doped β‐Ga2O3 Films on Sapphire Fabricated by Pulsed Laser Deposition

Formation of High‐Quality Heteroepitaxial β‐Ga2O3 Films by Crystal Phase Transition

Contact Info

Product

Resources

About

Solar-blind ultraviolet photodetector based on vertically aligned single-crystalline β-Ga₂O₃ nanowire arrays

Solar-blind ultraviolet photodetector based on vertically aligned single-crystalline β-Ga₂O₃ nanowire arrays

High‐Quality Si‐Doped β‐Ga₂O₃ Films on Sapphire Fabricated by Pulsed Laser Deposition

Formation of High‐Quality Heteroepitaxial β‐Ga₂O₃ Films by Crystal Phase Transition