Effect of thickness on the properties of ITO thin films deposited by RF-PERTE on unheated, flexible, transparent substrates

Carvalho, C. Nunes de; Luis, A.; Lavareda, G.; Fortunato, Elvira; Amaral, A.

doi:10.1016/s0257-8972(01)01641-3

Cited by 25 publications

(9 citation statements)

References 6 publications

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“…Thus, a maximum mobility is found at the thickness of 120 nm in this study. This result agrees quite well with those reported ITO material systems [40,41].…”

Section: Electricalsupporting

confidence: 93%

Thickness Dependence of Optoelectrical Properties of Mo‐Doped In₂O₃ Films Deposited on Polyethersulfone Substrates by Ion‐Beam‐Assisted Evaporation

Kuo

Liu

Jeng

et al. 2010

Journal of Nanomaterials

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Indium molybdenum oxide (IMO) films were deposited onto the polyethersulfone (PES) substrates by ion-beam-assisted evaporation (IBAE) deposition at low temperature in this study. The effects of film thickness on their optical and electrical properties were investigated. The results show that the deposited IMO films exhibit a preferred orientation of B(222). The electrical resistivity of the deposited film initially reduces then subsequently increases with film thickness. The IMO film with the lowest resistivity of 7.61 × 10−4 ohm-cm has been achieved when the film thickness is 120 nm. It exhibits a satisfactory surface roughness of 8.75 nm and an average visible transmittance of 78.7%.

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“…Thus, a maximum mobility is found at the thickness of 120 nm in this study. This result agrees quite well with those reported ITO material systems [40,41].…”

Section: Electricalsupporting

confidence: 93%

Thickness Dependence of Optoelectrical Properties of Mo‐Doped In₂O₃ Films Deposited on Polyethersulfone Substrates by Ion‐Beam‐Assisted Evaporation

Kuo

Liu

Jeng

et al. 2010

Journal of Nanomaterials

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“…The sharp decrease of carrier mobility when the thickness is over 160 nm can be attributed to the structural discontinuity or cracks. Similar phenomena have been reported in indium tin oxide film deposition [18,19]. The optical band gap values of MZO films estimated from absorption spectra of different MZO-coated specimens are shown in Figure 5.…”

Section: Journal Of Nanomaterialssupporting

confidence: 81%

The Influences of Thickness on the Optical and Electrical Properties of Dual-Ion-Beam Sputtering-Deposited Molybdenum-Doped Zinc Oxide Layer

Kuo

Liu

et al. 2011

Journal of Nanomaterials

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The thickness of transparent conductive oxide (TCO) layer significantly affects not only the optical and electrical properties, but also its mechanical durability. To evaluate these influences on the molybdenum-doped zinc oxide layer deposited on a flexible polyethersulfone (PES) substrate by using a dual-ion-beam sputtering system, films with various thicknesses were prepared at a same condition and their optical and electrical performances have been compared. The results show that all the deposited films present a crystalline wurtzite structure, but the preferred orientation changes from (002) to (100) with increasing the film thickness. Thicker layer contains a relative higher carrier concentration, but the consequently accumulated higher internal stress might crack the film and retard the carrier mobility. The competition of these two opposite trends for carrier concentration and carrier mobility results in that the electrical resistivity of molybdenum-doped zinc oxide first decreases with the thickness but suddenly rises when a critical thickness is reached.

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“…In contrast, in the case of donor-doped In2O3, conductivities of films deposited at lower temperature (≤200∘normalC) are typically lower than those of films prepared or annealed at higher temperature. In particular, films prepared at room temperature have conductivities below 1030.166667emS/cm, mostly because of lower carrier concentrations [20,21,22,23,24]. Films prepared at room temperature are often amorphous.…”

Section: Introductionmentioning

confidence: 99%

Electrical Properties of Low-Temperature Processed Sn-Doped In2O3 Thin Films: The Role of Microstructure and Oxygen Content and the Potential of Defect Modulation Doping

et al. 2019

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Low-temperature-processed ITO thin films offer the potential of overcoming the doping limit by suppressing the equilibrium of compensating oxygen interstitial defects. To elucidate this potential, electrical properties of Sn-doped In 2 O 3 (ITO) thin films are studied in dependence on film thickness. In-operando conductivity and Hall effect measurements during annealing of room-temperature-deposited films, together with different film thickness in different environments, allow to discriminate between the effects of crystallization, grain growth, donor activation and oxygen diffusion on carrier concentrations and mobilities. At 200 ∘ C , a control of carrier concentration by oxygen incorporation or extraction is only dominant for very thin films. The electrical properties of thicker films deposited at room temperature are mostly affected by the grain size. The remaining diffusivity of compensating oxygen defects at 200 ∘ C is sufficient to screen the high Fermi level induced by deposition of Al 2 O 3 using atomic layer deposition (ALD), which disables the use of defect modulation doping at this temperature. The results indicate that achieving higher carrier concentrations in ITO thin films requires a control of the oxygen pressure during deposition in combination with seed layers to enhance crystallinity or the use of near room temperature ALD.

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Effect of thickness on the properties of ITO thin films deposited by RF-PERTE on unheated, flexible, transparent substrates

Cited by 25 publications

References 6 publications

Thickness Dependence of Optoelectrical Properties of Mo‐Doped In₂O₃ Films Deposited on Polyethersulfone Substrates by Ion‐Beam‐Assisted Evaporation

Thickness Dependence of Optoelectrical Properties of Mo‐Doped In₂O₃ Films Deposited on Polyethersulfone Substrates by Ion‐Beam‐Assisted Evaporation

The Influences of Thickness on the Optical and Electrical Properties of Dual-Ion-Beam Sputtering-Deposited Molybdenum-Doped Zinc Oxide Layer

Electrical Properties of Low-Temperature Processed Sn-Doped In2O3 Thin Films: The Role of Microstructure and Oxygen Content and the Potential of Defect Modulation Doping

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Effect of thickness on the properties of ITO thin films deposited by RF-PERTE on unheated, flexible, transparent substrates

Cited by 25 publications

References 6 publications

Thickness Dependence of Optoelectrical Properties of Mo‐Doped In2O3 Films Deposited on Polyethersulfone Substrates by Ion‐Beam‐Assisted Evaporation

Thickness Dependence of Optoelectrical Properties of Mo‐Doped In2O3 Films Deposited on Polyethersulfone Substrates by Ion‐Beam‐Assisted Evaporation

The Influences of Thickness on the Optical and Electrical Properties of Dual-Ion-Beam Sputtering-Deposited Molybdenum-Doped Zinc Oxide Layer

Electrical Properties of Low-Temperature Processed Sn-Doped In2O3 Thin Films: The Role of Microstructure and Oxygen Content and the Potential of Defect Modulation Doping

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Thickness Dependence of Optoelectrical Properties of Mo‐Doped In₂O₃ Films Deposited on Polyethersulfone Substrates by Ion‐Beam‐Assisted Evaporation

Thickness Dependence of Optoelectrical Properties of Mo‐Doped In₂O₃ Films Deposited on Polyethersulfone Substrates by Ion‐Beam‐Assisted Evaporation