Effect of thickness scaling on the switching dynamics of ferroelectric HfO2–ZrO2 capacitors

Peng, Yue; Wang, Zhe; Xiao, Wenwu; Ma, Yue; Liu, Fenning; Deng, Xinran; Yu, Xiao; Liu, Yan; Han, Genquan; Hao, Yue

doi:10.1016/j.ceramint.2022.06.163

Cited by 7 publications

(8 citation statements)

References 15 publications

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“…Compared with HZO, the polarization switching speed of SL structure devices is significantly improved . Similarly, the critical electric field for 80% saturated P sw of HZO, SL 5 , SL 10 , and SL 15 devices was approximately 1.66, 1.57, 1.62, and 1.62 MV/cm, respectively, suggesting that SL structure devices maybe switching more easily under the same condition …”

Section: Resultsmentioning

confidence: 89%

“…In addition, the switching dynamics of all the SL structure and HZO films was systematically investigated based on the inhomogeneous field mechanism (IFM) model. 35 The test sequences used for the switching polarization (P sw ) measurement are shown in Figure 8a. Initially, a preset pulse with 2.5 V/1 ms was first applied to all the capacitors to achieve one direction of polarization saturation state.…”

Section: Resultsmentioning

confidence: 99%

“…12 Similarly, the critical electric field for 80% saturated P sw of HZO, SL 5 , SL 10 , and SL 15 devices was approximately 1.66, 1.57, 1.62, and 1.62 MV/cm, respectively, suggesting that SL structure devices maybe switching more easily under the same condition. 35 The IFM model was employed to further analyze the switching dynamics of the HZO and SL capacitors, which takes into account the nonuniform distribution of the electric field within the polycrystalline HfO 2 -based FE film. 35−37 According to ref 37, the partial derivative of switching polarization as a function of the local electric field (E F ) for the HZO and SL films was calculated and is shown in Figure 9a−d, while the time-dependent threshold field (E th ) versus pulse time is shown in Figure 9e.…”

Section: Resultsmentioning

confidence: 99%

“…The values of E a for HZO, SL 5 , SL 10 , and SL 15 are 9.98, 9.69, 9.55, and 9.60 MV/cm, respectively. The lower the E a value, the easier the polarization switching process, 35 indicating that the SL devices could be switched more easily under the same conditions compared to HZO. Similarly, the smaller the characteristic polarization switching time (τ 0 ), the faster the switching speed.…”

Section: Resultsmentioning

confidence: 99%

“…In addition, the switching dynamics of all the SL structure and HZO films was systematically investigated based on the inhomogeneous field mechanism (IFM) model . The test sequences used for the switching polarization ( P sw ) measurement are shown in Figure a.…”

Section: Resultsmentioning

confidence: 99%

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HfO₂–ZrO₂ Ferroelectric Capacitors with Superlattice Structure: Improving Fatigue Stability, Fatigue Recovery, and Switching Speed

Kang,

Peng,

Xiao

et al. 2024

ACS Appl. Mater. Interfaces

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HfO 2 −ZrO 2 ferroelectric films have recently gained considerable attention from integrated circuit researchers due to their excellent ferroelectric properties over a wide doping range and low deposition temperature. In this work, different HfO 2 − ZrO 2 superlattice (SL) FE films with varying periodicity of HfO 2 (5 cycles)−ZrO 2 (5 cycles) (SL 5 ), HfO 2 (10 cycles)−ZrO 2 (10 cycles) (SL 10 ), and HfO 2 (15 cycles)−ZrO 2 (15 cycles) (SL 15 ) were studied systematically. The HfZrO x (HZO) alloy was used as a comparison device. The SL 5 film demonstrated improved ferroelectric properties compared to the HZO film, with the 2 times remnant polarization (2P r ) values increasing from 41.4 to 48.6 μC/cm 2 at an applied voltage of 3 V/10 kHz. Furthermore, the first-order reversal curve diagrams of different SL and HZO capacitors at different states (initial, wake-up, fatigue, and recovery) were measured. The SL capacitors were found to effectively suppress the diffusion of defects during P−V cycling, resulting in improved fatigue stability characteristics and fatigue recovery capability compared to the HZO capacitor. Moreover, an improved switching speed of the SL films compared to the HZO capacitor was concluded based on the inhomogeneous field mechanism (IFM) model. These results indicate that the SL structure has a high potential in future high-speed ferroelectric memory applications with excellent stability and recovery capability.

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Section: Resultsmentioning

confidence: 89%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 3 more Smart Citations

HfO₂–ZrO₂ Ferroelectric Capacitors with Superlattice Structure: Improving Fatigue Stability, Fatigue Recovery, and Switching Speed

Kang,

Peng,

Xiao

et al. 2024

ACS Appl. Mater. Interfaces

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Tuning the ferroelectricity of Hf0.5Zr0.5O2 with alloy electrodes

Liu,

Dang,

Yang

et al. 2024

Sci. China Inf. Sci.

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Enhancing ferroelectric performance in hafnia-based MFIS capacitor through interface passivation and bulk doping

Yang,

Xie,

Zhu

et al. 2024

Nanotechnology

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In recent times, there has been a notable surge of interests in hafnia (HfO2)-based ferroelectrics, primarily due to their remarkable ferroelectric properties employed in ultra-thin configurations, alongside their compatibility with the conventional CMOS manufacturing process. In order to harness the full potential of HfO2-based films for high-performance non-volatile memory applications, it is imperative to enhance their ferroelectric characteristics and durability. This study introduces a straightforward approach aimed at augmenting the ferroelectric performance of HfxZr1-xO2 (HZO) films deposited on silicon (Si) substrates through the engineering of oxygen vacancies (VO). The results of this endeavor demonstrate a significant enhancement in ferroelectric performance, characterized by a 2Pr value of 47 µC/cm2 and impressive endurance, enduring up to 108 cycles under an 8 MV/cm electric field without the need of a wake-up process. This marked improvement can be attributed to a dual-pronged approach, involving the incorporation of an Al2O3 interlayer and the introduction of Al atoms into the HZO film. The Al2O3 interlayer primarily serves to mitigate the presence of oxygen vacancies at the interface, while the introduction of Al dopants elevates the concentration of oxygen vacancies within the bulk material. This modulation of oxygen vacancy concentration proves instrumental in facilitating the formation of a ferroelectric oⅢ phase within the HZO-based films, thereby further augmenting their ferroelectric performance. This innovative and effective strategy offers an alternative avenue for enhancing the ferroelectric properties of materials characterized by a fluorite crystal structure.

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Effect of thickness scaling on the switching dynamics of ferroelectric HfO2–ZrO2 capacitors

Cited by 7 publications

References 15 publications

HfO₂–ZrO₂ Ferroelectric Capacitors with Superlattice Structure: Improving Fatigue Stability, Fatigue Recovery, and Switching Speed

HfO₂–ZrO₂ Ferroelectric Capacitors with Superlattice Structure: Improving Fatigue Stability, Fatigue Recovery, and Switching Speed

Tuning the ferroelectricity of Hf0.5Zr0.5O2 with alloy electrodes

Enhancing ferroelectric performance in hafnia-based MFIS capacitor through interface passivation and bulk doping

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Effect of thickness scaling on the switching dynamics of ferroelectric HfO2–ZrO2 capacitors

Cited by 7 publications

References 15 publications

HfO2–ZrO2 Ferroelectric Capacitors with Superlattice Structure: Improving Fatigue Stability, Fatigue Recovery, and Switching Speed

HfO2–ZrO2 Ferroelectric Capacitors with Superlattice Structure: Improving Fatigue Stability, Fatigue Recovery, and Switching Speed

Tuning the ferroelectricity of Hf0.5Zr0.5O2 with alloy electrodes

Enhancing ferroelectric performance in hafnia-based MFIS capacitor through interface passivation and bulk doping

Contact Info

Product

Resources

About

HfO₂–ZrO₂ Ferroelectric Capacitors with Superlattice Structure: Improving Fatigue Stability, Fatigue Recovery, and Switching Speed

HfO₂–ZrO₂ Ferroelectric Capacitors with Superlattice Structure: Improving Fatigue Stability, Fatigue Recovery, and Switching Speed