Effect of TiO2 nanoparticles on the mass transfer process of absorption of toluene: Experimental investigation and molecular dynamics simulation

Yi, Qian; Hao, Xiaoyu; Li, Xinnong; Dong, Haojie; Sun, Lanyi

doi:10.1016/j.jece.2023.109474

Cited by 4 publications

(1 citation statement)

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“…In addition, the equilibrium uptake amount (mg g −1 ) of the GO-AHZTA composite for Ga 3+ increases with an increase in the contact temperature, suggesting that an endothermic reaction during the adsorption process occurs. Equilibrium relationships between the GO-AHZTA composite and Ga 3+ are described by different adsorption isotherms, including the linear Langmuir isothermal and linear Freundlich isothermal models (Equations (S3) and (S4)) [ 48 ]. As shown in Figure 9 B,C and Table 2 , the parameters of different isothermal models are summarized.…”

Section: Resultsmentioning

confidence: 99%

Preparation of 4-Amino-3-hydrazino-1,2,4-triazol-5-thiol-Modified Graphene Oxide and Its Greatly Enhanced Selective Adsorption of Gallium in Aqueous Solution

Zhu,

Guo,

Zheng

2024

Molecules

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Efficient recovery of gallium (Ga) from vanadium slag processing residue (VSPR) solution is of great significance for environmental protection and resource utilization, but improving its selective adsorption against the coexisting Sc3+ and In3+ is still challenging. Herein, a novel adsorbent consisting of 4-amino-3-hydrazino-1,2,4-triazol-5-thiol (AHTZT)-modified graphene oxide (GO-AHTZT) was successfully synthesized that exhibits a higher adsorption selectivity for Ga3+ in VSPR solution with coexisting Sc3+ and In3+. Under optimal conditions, the adsorption capacity of GO-AHTZT for Ga3+ can reach 23.92 mg g−1, which is 4.9 and 12.6 times higher than that for Sc3+ (4.87 mg g−1) and In3+ (1.90 mg g−1) adsorption, indicating the excellent anti-interference ability of GO-AHTZT against Sc3+ and In3+. The process and mechanism of Ga3+ adsorption onto GO-AHTZT was also studied and discussed in detail. By measuring the adsorption process and by characterizing the adsorbent before and after adsorption, we demonstrate that the selective interaction between the Ga3+- and N-containing groups in AHTZT is the main reason for the improved adsorption selectivity. This work opens up an avenue for the design and synthesis of highly selective adsorbents for Ga3+ in complex VSPR solutions.

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Section: Resultsmentioning

confidence: 99%