Effect of TiO2 on the Repassivation Kinetics of Alloy 600 in Caustic Solutions

Abstract

Effects of titanium dioxide (TiO 2 ) inhibitor on repassivation kinetics and defect density of the passive film formed on Alloy 600 (UNS N06600) were examined. Addition of 0.05 g/L TiO 2 powder increased the repassivation rate of Alloy 600. Passive film initially nucleated and grew according to the place exchange model in which log i(t) is linearly proportional to q(t), and later it grew according to high-field ion conduction model in which log i(t) is linearly proportional to the 1/q(t). Ti enrichment in the film decreased the defect density of the film and increased its protectiveness.

Solar Driven 15.7% Hydrogen Conversion by Harmony of Light Harvesting, Electron Transporting Bridge, and S‐Defection in a Self‐Assembled Microscale CuS/rGO/CP Photoanode

“…The band gap of CuS calculated by the Kubelka‐Munk plot was about 1.36 eV (Figure S5b, Supporting Information), and it was predicted that all particles were p‐type semiconductors from the inversely proportional slope of the Mott–Schottky plot (Figure S5c, Supporting Information). [ 26 ] The potential of the VB maximum of CuS obtained from the XPS‐VB curve was 1.99 eV, and the VBM of 2CuS/1rGO was 1.91 eV (Figure S5d, Supporting Information).…”