Effect of top coat and resist thickness on line-edge roughness

Singh, Lovejeet; Matthew, Itty; Pawloski, Adam R.; Minvielle, Anna Maria

doi:10.1117/12.655925

Cited by 13 publications

(5 citation statements)

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“…Ultrathin CARs are known to display high linewidth roughness (LWR) which poses a risk on the final reliability of the intended electrical devices. Past work [35,36,37] has indicated that for the case of conventional KrF and ArF CARs based on blending of the PAG/quencher with the polymer resin, any unevenness on the distribution of such molecular components is exacerbated in the ultrathin film regime and results in larger feature edge variations. For the case of polymer-bound PAG-based CARs where the photosensitive moiety is attached to a polymer sidechain, the distribution is expected to be highly uniform throughout the film.…”

Section: Thin Resist Image Transfer Utilizing Metal-based Hardmask Vsmentioning

confidence: 98%

Pattern collapse mitigation strategies for EUV lithography

et al. 2012

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In this study, a comprehensive approach towards assessing pattern collapse challenges and solutions for Extreme Ultraviolet Lithography (EUV) resists beyond the 14nm node is undertaken. The fundamental forces that drive pattern deformation are reassessed in order to propose a generalized design criterion for EUV photoresists and aqueous surfactanated rinses. Furthermore, ultimate pattern collapse solutions such as solvent drying utilizing pressurized fluids (supercritical CO 2 ) are exemplified for sub-60nm pitch EUV patterning. In parallel, alternative EUV integration schemes that use a metal-based hardmask (MHM) are studied using a specifically tailored self-assembled monolayer (SAM) to prevent delamination-driven pattern collapse due to resist-hardmask interfacial adhesion failure. Finally, the marginal image transfer of 40nm pitched L/S of ultrathin EUV resist into a SiARC-underlayer stack appears to be gated by the EUV resist resolution limit and the reduced film thickness budget. An alternative method for achieving improved postetch line width roughness (LWR) with an ultrathin MHM-based integration scheme is herein demonstrated.

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Section: Thin Resist Image Transfer Utilizing Metal-based Hardmask Vsmentioning

confidence: 98%

Pattern collapse mitigation strategies for EUV lithography

et al. 2012

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“…In addition, we examined the patterning capabilities of these formulations at film thicknesses of 50nm and below, a range where confinement effects are expected to dominate all aspects of materials properties [23][24][25][26] including diffusion behavior. [27][28][29][30][31] Assuming resist aspect ratio scaling, patterning for the 22nm half-pitch node will require film thicknesses near 40nm. Figure 6 illustrates successful patterning of 50 and 30nm thick chemically amplified resist films to 25nm half-pitch.…”

Section: Line/space Patterning In Ultrathin Resist Films Using the Psmentioning

confidence: 99%

Evaluation of EUV resist materials for use at the 32 nm half-pitch node

et al. 2008

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The 2007 International Technology Roadmap for Semiconductors (ITRS) 1 specifies Extreme Ultraviolet (EUV) lithography as one leading technology option for the 32nm half-pitch node, and significant world wide effort is being focused towards this goal. Readiness of EUV photoresists is one of the risk areas. In 2007, the ITRS modified performance targets for high-volume manufacturing EUV resists to better reflect fundamental resist materials challenges. For 32nm half-pitch patterning at EUV, a photospeed range from 5-30 mJ/cm 2 and low-frequency linewidth roughness target of 1.7nm (3σ) have been specified. Towards this goal, the joint INVENT activity (AMD, CNSE, IBM, Micron, and Qimonda) at Albany evaluated a broad range of EUV photoresists using the EUV MET at Lawrence Berkeley National Laboratories (LBNL), and the EUV interferometer at the Paul Scherrer Institut (PSI), Switzerland. Program goals targeted resist performance for 32nm and 22nm groundrule development activities, and included interim relaxation of ITRS resist performance targets. This presentation will give an updated review of the results. Progress is evident in all areas of EUV resist patterning, particularly contact/via and ultrathin resist film performance. We also describe a simplified figure-of-merit approach useful for more quantitative assessment of the strengths and weaknesses of current materials.

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“…As an effect of resist thinning, LER increases with decreasing resist thickness. [17][18][19][20] For the improvement of resist performance, not only issues in the horizontal direction such as LER but also those in the vertical direction of resist films should be considered. The resist film can be assumed to consist of three layers (nearsurface, bulk, and near-substrate layers).…”

Section: Introductionmentioning

confidence: 99%

Theoretical study of interfacial effects on low-energy electron dynamics in chemically amplified resist processes of photomask fabrication

Kozawa¹,

Tamura²

2021

Jpn. J. Appl. Phys.

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The resist thickness has decreased with the miniaturization of transistors. In chemically amplified electron beam resists used for photomask fabrication, thermalized electrons play an important role in acid generation. The interfacial effects of low-energy electrons strongly affect the latent image formation in thin resist films. In this study, we investigated the relationships between the boundary conditions of low-energy electrons at interfaces and the protected unit distribution in terms of resist thickness, concentrations of photoacid generators and photodecomposable quenchers (PDQs), and sensitivity. The dependences of chemical gradient and optimum PDQ concentration on the boundary conditions at the interfaces for low-energy electrons were clarified. It was found that the PDQ concentration should be optimized, depending on not only the boundary conditions but also the resist film thickness. That is, the resist depth profile can be controlled by the boundary conditions at the interfaces for low-energy electrons.

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Effect of top coat and resist thickness on line-edge roughness

Cited by 13 publications

References 0 publications

Pattern collapse mitigation strategies for EUV lithography

Pattern collapse mitigation strategies for EUV lithography

Evaluation of EUV resist materials for use at the 32 nm half-pitch node

Theoretical study of interfacial effects on low-energy electron dynamics in chemically amplified resist processes of photomask fabrication

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