2008
DOI: 10.3788/aos20082801.0143
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Effect of TransferredAnsferred Submount Materials on Properties of GaN-Based LED Chips Grown on Si Substrate

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Cited by 2 publications
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“…This kind of structure improves not only the efficiency but also the lifetime of LEDs. For the phosphor layer away from the LED chip, the heat generated by the LED chip only transfer to the substrate [7] instead of the phosphor. The probability of a light ray emitted by the phosphor hitting the low reflective LED chip directly is small.…”
mentioning
confidence: 99%
“…This kind of structure improves not only the efficiency but also the lifetime of LEDs. For the phosphor layer away from the LED chip, the heat generated by the LED chip only transfer to the substrate [7] instead of the phosphor. The probability of a light ray emitted by the phosphor hitting the low reflective LED chip directly is small.…”
mentioning
confidence: 99%
“…Most of spontaneous emission was trapped in the active layer performing as guided modes and delocalized modes [2] . Various kinds of methods including surface roughness, flip chip [3,4] , and substrate mirror [5,6] were used to enhance the light extraction efficiency. The introduction of two-dimensional (2D) photonic crystal (PC) structure on top surface of GaN LEDs is a novel method to increase light extraction efficiency.…”
mentioning
confidence: 99%