2023
DOI: 10.3390/ma16186138
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Effect of Trap Behavior on the Reliability Instability of Metamorphic Buffer in InAlAs/InGaAs MHEMT on GaAs

Ki-Yong Shin,
Ju-Won Shin,
Walid Amir
et al.

Abstract: Our investigation focused on assessing the influence of the metamorphic buffer in metamorphic high-electron-mobility transistors (MHEMT) that were grown on GaAs substrates. While an MHEMT exhibited elevated off-state current levels, its direct current (DC) and radio frequency (RF) traits were found to be comparable to those of InP-based lattice-matched high-electron-mobility transistors (LM-HEMTs). However, the Pulsed I–V measurement results confirmed the presence of the fast transient charging effect, leading… Show more

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