Effect of traps on the charge transport in semiconducting polymer PCDTBT

Khan, Mohd Taukeer; Agrawal, Vikash; Almohammedi, Abdullah; Gupta, Vinay

doi:10.1016/j.sse.2018.04.005

Cited by 26 publications

(10 citation statements)

References 30 publications

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“…This is in accordance with the device performance ( Figure S2 ) owing to improved carrier transport ( Khadka et al., 2017 ). The high-field region was fitted with space charge-limited current equation for distributing exponential traps ( Blom et al., 1996 ; Khan et al., 2018 ; Kao and Hwang, 1981 ):

where q is the total charge, N eff is the effective density of states, ε is the permittivity of perovskite layer, d is the thickness of perovskite layer, and H eff is the sum of the shallow density of traps at the edge of the valence band and conduction band. μ eff is the effective carrier mobility given by ( Kao and Hwang, 1981 ):

where μ p and μ e hole and electron mobilities, respectively; B(m, n) is the β function; σ is the capture cross-section; v is thermal velocity; and the product v σ is charge carrier capture rate constant or recombination rate constant.…”

Section: Discussionmentioning

confidence: 99%

Mechanistic origin and unlocking of negative capacitance in perovskites solar cells

et al. 2021

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Section: Discussionmentioning

confidence: 99%

Mechanistic origin and unlocking of negative capacitance in perovskites solar cells

et al. 2021

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“…SCLC is a kind of steady‐state measurement technique used to study the transmission characteristics of semiconductor materials. In the SCLC measurement, by measuring the dark state J‐V curve of the hole‐only or electron‐only diode structure sample, the carrier mobility can be easily obtained through the Mott‐Gurney Relation (2), 94,165–167

J = \frac{9}{8} ε ε_{0} μ \frac{V^{2}}{d^{3}}

where

J

is the current density,

ε

and

ε_{0}

are the relative permittivity and vacuum permittivity, respectively

μ

is the carrier mobility,

V

is the applied voltage, and

d

is the thickness of the perovskite layer. Using a hole extraction layer‐only device or an electron extraction layer‐only device, hole mobility or electron mobility can be obtained, respectively.…”

Section: Charge Transportmentioning

confidence: 99%

Probing charge carrier dynamics in metal halide perovskite solar cells

Qiu

Wagner

Liu

et al. 2022

EcoMat

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With rocketing power conversion efficiency and continuously enhancing stability, perovskite solar cells (PSCs) have shown extraordinary potential to become a key player in tomorrow's energy industry. An essential approach to improve the performance and quantify the loss mechanisms of PSCs is the analysis of charge carrier dynamics. Although the structure of PSCs is diverse, the characterization techniques for the dynamic measurement are similar. With the aim of providing researchers with the necessary knowledge to choose suitable measurement methods, this review represents a comprehensive overview of the techniques to assess the entire spectrum of carrier dynamic processes from femtoseconds to many seconds, including charge generation, relaxation, recombination, transport, extraction and collection.

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“… and calculated to be 3.97 × 10 16 cm -3 at room temperature. The trap filling region was fitted with SCLC equation for exponentially distributed traps 75,76 :…”

Section: mentioning

confidence: 99%